Chemical beam epitaxy for photovoltaics and GaN-based electronics

用于光伏和 GaN 电子产品的化学束外延

• 批准号: 299093-2010
• 负责人: Arès, Richard
• 金额: $ 1.46万
• 依托单位: Université de Sherbrooke
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2011
• 资助国家: 加拿大
• 起止时间: 2011-01-01 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=480822
• 关键词: Chemical; beam; epitaxy; photovoltaics; GaN

With the impending environmental and energy crises, industries such as high efficiency solar cells and electrically powered vehicles are poised for sustained, spectacular growth for the near future. Yole developement is predicting strong market growth for power devices to a level of 20 billion dollars by 2020. Likewise, in a comprehensive report, Greenpeace is predicting that concentrated solar cells will supply about 25% of the world's energy by 2050. However, the biggest limiting factor for these markets is the production cost of their respective technologies. A significant part of the production costs is dedicated to the basic material fabrication by a technique called epitaxy, by which very high quality thin films are deposited on a crystalline substrate. The production costs can be decreased significantly if a cheap substrate material is used. Silicon is the best candidate for such a purpose. Several methods to that end have been proposed in recent years, but none is combining low production cost with effective residual thermal stress relaxation.

随着迫在眉睫的环境和能源危机，高效太阳能电池和电动汽车等行业在不久的将来将保持持续、惊人的增长。Yole开发公司预测，到2020年，电力设备的市场规模将达到200亿美元。同样，绿色和平组织在一份综合报告中预测，到2050年，聚光太阳能电池将提供全球约25%的能源。然而，这些市场最大的限制因素是各自技术的生产成本。生产成本的很大一部分是通过一种叫做外延的技术来制造基本材料，通过这种技术，在晶体衬底上沉积非常高质量的薄膜。如果使用便宜的衬底材料，可以显著降低生产成本。硅是这种用途的最佳候选材料。近年来，人们提出了几种方法来达到这一目的，但没有一种方法能将低生产成本与有效的残余热应力松弛结合起来。