Chemical Beam Epitaxy (CBE) Upgrade for Advanced Optoelectronic Devices
Chemical Beam Epitaxy (CBE) Upgrade for Advanced Optoelectronic Devices
批准号:
RTI-2016-00091
负责人:
Fafard, Simon
金额:
$10.59万
依托单位:
依托单位国家:
加拿大
项目类别:
Research Tools and Instruments
财政年份:
2015
资助国家:
加拿大
项目状态:
已结题
起止时间:
2015-01-01 至 2016-12-31
中文摘要
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英文摘要
The main motivation for the proposed equipment is to enable research in the design and implementation of novel heterostructures and micro/nano-structures grown with
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财政年份:2018
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负责人:Fafard, Simon
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依托单位:
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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负责人:Fafard, Simon
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依托单位:
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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财政年份:2017
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负责人:Fafard, Simon
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依托单位:
Novel III-V heterostructures and designs for high-performance avalanche photodiode devices
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资助金额:$9.49万
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财政年份:2017
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负责人:Fafard, Simon
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依托单位:
Novel III-V heterostructures and designs for high-performance avalanche photodiode devices
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Self-assembled quantum dots: Properties and applications
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财政年份:2002
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依托单位:
Self-assembled quantum dots: Properties and applications
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批准号:217909-1999
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批准号:217909-1999
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财政年份:2000
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依托单位:
Self-assembled quantum dots: Properties and applications
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批准号:217909-1999
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.03万
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财政年份:1999
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负责人:Fafard, Simon
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依托单位:
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