University of Toronto Enhanced Molecular Beam Epitaxy Facility

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Molecular Beam Epitaxy (MBE) is one of the state of the art tools used in the fabrication of compound semiconductor nanostructures, and providing the means to realise technological applications in areas such as optoelectronics, telecommunications, quantum optics and quantum computing, sensing, photovoltaics, and photonics, for example. MBE is based on using an ultrahigh purity (so called ultra high vacuum, UHV) environment in which atomic/molecular beams of constituent elements empinge on a heated substrate to prepare layers, islands or wires of material with controlled dimensions and purity, with monolayer level control. Currently there is only a single MBE system serving all of the users at the University of Toronto (UofT) and enabling compound semiconductor materials for subsequent processing using state of the art nanofabrication tools - for example, using the electron beam lithography tools in ECTI and also the Centre for Nanotechnology. This MBE system which has successfully served a broad base of users for over the past decade is now in need of key enhancements to continue to serve the researchers and students within UofT. Requested enhancements focus on (i) maintaining ultrahigh vacuum (UHV) integrity over long periods (i.e., using an auxiliary vacuum system and valved cracker) and (ii) achieving precise control over the MBE growth processes (i.e., by species/growth mode control through accurate growth temperature (Tg) monitoring even at v.low Tg and advanced electron diffraction software). Having this enhanced facility at UofT in conjunction with other unique world class fabrication/characterisation facilities, enables end-to-end realization of unique nanostructures/devices, with the ability to tune processes with short turn-around times.