Investigation of Nanoengineered III-V Buffer Layers for Hetero-integration on Silicon

用于硅异质集成的纳米工程 III-V 族缓冲层的研究

• 批准号: 552127-2020
• 负责人: Ruda, Harry
• 金额: $ 11.36万
• 依托单位: University of Toronto
• 依托单位国家: 加拿大
• 项目类别: Alliance Grants
• 财政年份: 2021
• 资助国家: 加拿大
• 起止时间: 2021-01-01 至 2022-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=719494
• 关键词: Investigation; Nanoengineered; III; Buffer; Layers

One of the most technically challenging and expensive aspects of silicon photonics for applications such as transceiver modules is the incorporation of a laser source. Difficulties include poor coupling of light from the laser chip to the silicon photonics chip, heat extraction from and temperature sensitivity of the laser device, cost of substrates used for the laser device, feedback sensitivity of the laser requiring incorporation of bulky optical isolators and lenses, and expensive packaging and specialized fabrication steps. All of these issues translate to a decreased yield, increased cost, and longer production time.Researchers at the University of Toronto, led by Prof. Harry Ruda, have pioneered and begun to demonstrate a technique by which single-crystal InGaAs with low defect density can be directly grown on a (100) silicon substrate. Here, in collaboration with Huawei Technologies, we propose to develop and optimize an approach based on leveraging nano-templating method to provide integration of the active III-V optical devices with Si passive optics as well as Si microelectronics. A successful development of the proposed technology will facilitate (i) realization of defect-free III-V regions required for high-performance opto-electronics applications (ii) close coupling between Silicon and III-V layers necessary for optical devices such as lasers with the III-V region as the active medium coupled to waveguides in Silicon. Further, dislocation-free hybrid growth envisaged here uses industry standard Si (100) as opposed to non-standard 6 degree miscut Si substrates, and dramatically enhances the ease of their incorporation into existing technology.

硅光子学在诸如收发器模块之类的应用中最具挑战性和昂贵的方面之一是激光源的合并。困难包括从激光芯片到硅光子芯片的光耦合不良，从激光器设备的热量提取和温度敏感性，用于激光器设备的底物的成本，激光的反馈灵敏度，需要掺入笨重的光学隔离器和镜头，以及昂贵的包装和专业包装和专业制造步骤。所有这些问题都转化为产量下降，成本增加和更长的生产时间。由哈里·鲁达（Harry Ruda）教授领导的多伦多大学的研究人员开创了率，并开始展示一种技术，通过该技术，具有低缺陷密度的单晶体INGAA可以在A（100）硅基壳上直接生长。在这里，通过与华为技术合作，我们建议开发和优化一种基于利用纳米温度方法的方法，以将主动IIII-V光学设备与SI无源光学和SI微电子学提供整合。 提出的技术的成功开发将有助于（i）实现高性能光电涂料所需的无缺陷III-V区域（II）在硅和III-V层之间密切的偶联是激光器与III-V区域所必需的III-V区域所必需的III-V层，这是III-V区域所必需的，是在硅酸盐中与活性介质相耦合到硅硅的活性介质。此外，这里设想的无脱位混合增长使用了行业标准SI（100），而不是非标准的6度误解SI基板，并极大地增强了其融合到现有技术的便利性。