Development of Next-Generation Magnetic Field Sensors Based on Magnetic Tunnel Junction Technology

点击翻译按钮获取中文摘要

Magnetic tunnel junction (MTJ) technology has been advancing very rapidly in recent years and has already been successfully applied for the development of next-generation hard drives and non-volatile magnetic memories (known as MRAM). As its commercialization in the above two markets begins, this emerging quantum tunneling technology also offers a huge potential for super-sensitive low-field magnetic sensing, another billion-dollar market, thanks to its advantages of high sensitivity, small size, low cost, and low power consumption. Partnering with an Ottawa-based company, Guildline Instruments Limited (GIL), the proposed research is aimed to conduct experimental studies to investigate the underlying potentials of MTJs for ultra-low magnetic field sensing. Our ultimate goal is to transfer this emerging MTJ technology to real-world products by developing next-generation supersensitive magnetic field sensors to displace those based on older technologies (e.g., Hall Effect sensors). By experimentally quantifying and modeling the key parameters that hinder MTJs from practical applications, i.e., the temperature effects, noises, hysteresis, and nonlinearity, our research reduces guesswork. The findings of the research will permit GIL to target its resources with greater effectiveness in developing MTJ sensors, and these new-generation magnetic sensors will be a significant addition to the GIL's proud history and bring more sales and more jobs in Canada. Furthermore, the economic impact of the MTJ sensors is far greater than their sales volume because they would increase economic productivity by playing key roles in manufacturing technology, in health care, and in many other industries in Canada.