Computational modelling of interacting electrons in inhomogeneous environments

非均匀环境中相互作用电子的计算模型

• 批准号: 288214-2013
• 负责人: Atkinson, William
• 金额: $ 1.31万
• 依托单位: Trent University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2013
• 资助国家: 加拿大
• 起止时间: 2013-01-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=525736
• 关键词: Computational; modelling; interacting; electrons; inhomogeneous

Modern technology---computers, cell phones, medical equipment---is possible because of a decades-long push towards making smaller and faster electronic devices. This exponential growth of computing power over time is known as Moore's law. As we begin to bump up against fundamental limits to Moore's law, interest is growing in broadening the capabilities of nano-electronic devices. For example, the past decade has seen significant amounts of basic research devoted to ferroelectric and magnetic materials that might, one day, be incorporated into new high-speed memory devices. To this end, research is moving away from traditional semiconductors into new families of materials. My work focuses on transition metal oxides.

现代技术-电脑、手机、医疗设备-之所以成为可能，是因为几十年来人们一直在努力制造更小、更快的电子设备。 这种计算能力随时间的指数增长被称为摩尔定律。 当我们开始碰到摩尔定律的基本限制时，人们对扩大纳米电子器件的能力的兴趣正在增长。 例如，在过去的十年中，我们看到了大量的铁电和磁性材料的基础研究，这些材料有朝一日可能会被纳入新的高速存储设备中。 为此，研究正在从传统的半导体转向新的材料家族。 我的工作重点是过渡金属氧化物。