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Theory of complex oxides: superconductivity and interfaces

Theory of complex oxides: superconductivity and interfaces
复合氧化物理论:超导性和界面
批准号:
RGPIN-2018-04878
负责人:
Atkinson, William
金额:
$2.99万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2020
资助国家:
加拿大
项目状态:
已结题
起止时间:
2020-01-01 至 2021-12-31

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中文摘要
翻译
现代技术-计算机、手机、医疗设备-由于几十年来对制造更小、更快的电子设备的推动而成为可能。这种计算能力随时间呈指数级增长的现象被称为摩尔定律。随着我们开始遇到摩尔定律的基本限制,人们对扩大纳米电子器件的能力越来越感兴趣。例如,在过去的十年里,人们对铁电和磁性材料进行了大量的基础研究,有朝一日,这些材料可能会被整合到新的高速存储设备中。为此,研究正在从传统的半导体转向新的材料家族。我的工作重点是过渡金属氧化物。 过渡金属氧化物具有很大的潜力,因为它们具有许多传统半导体所没有的特性-超导、磁性、铁电和其他特性。目前,需要回答的问题是非常基本的:从自然的基本规律来看,我们能理解这些材料是如何表现的吗?事实证明,许多过渡金属氧化物在受限几何结构(例如,纳米器件)中具有不同的物理性质,而不是在大样本中。我们能理解为什么吗?在我的研究中,我根据物理学的基本定律构建了计算机模型,来模拟各种过渡金属氧化物的电子性质。通过这些模型,我希望解释简单氧化物结构(界面和异质结构)的物理性质,并了解杂质和缺陷所起的微妙作用。 我的研究主要集中在两类材料上:高温超导体和钛酸锶界面。这些家族中的第一个是在近30年前发现的,但随着纳米级复杂的自组织行为的新发现,仍让我们感到惊讶。第二个家族在纳米电子学方面有更直接的应用潜力,但也提出了电子在纳米尺度上的行为方式的问题;这里的基本目标是探索通过适当选择建筑材料和几何结构可以工程到设备中的广泛可能的性质。
英文摘要
Modern technology---computers, cell phones, medical equipment---is possible because of a decades-long push towards making smaller and faster electronic devices. This exponential growth of computing power over time is known as Moore's law. As we begin to bump up against fundamental limits to Moore's law, interest is growing in broadening the capabilities of nano-electronic devices. For example, the past decade has seen significant amounts of basic research devoted to ferroelectric and magnetic materials that might, one day, be incorporated into new high-speed memory devices. To this end, research is moving away from traditional semiconductors into new families of materials. My work focuses on transition metal oxides. Transition metal oxides hold a lot of potential because they can have many properties---superconductivity, magnetism, ferroelectricity, and others---that are not found in conventional semiconductors. At present, the questions that need to be answered are very basic: can we understand, in terms of the fundamental laws of nature, how these materials behave? It turns out that many transition metal oxides have different physical properties in confined geometries (for example, nanodevices) than they do in large samples. Can we understand why? In my research, I construct computer models, based on fundamental laws of physics, to simulate the electronic properties of various transition metal oxides. With these models, I hope to explain the physical properties of simple oxide structures (interfaces and heterostructures), and to understand the subtle role played by impurities and defects. My research focuses on two families of materials: high temperature superconductors and strontium titanate interfaces. The first of these families was discovered almost 30 years ago, but continues to surprise us with new revelations of complex self-organised behaviour that emerges on nanometre scales. The second family has more immediate potential for applications in nanoelectronics, but also raises questions about how electrons behave at the nanometre scale; here the fundamental goal is to explore the vast range of possible properties that can be engineered into devices by appropriate choice of building materials and geometry.
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Theory of complex oxides: superconductivity and interfaces
  • 批准号:
    RGPIN-2018-04878
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $2.99万
  • 财政年份:
    2022
  • 负责人:
    Atkinson, William
  • 依托单位:
Theory of complex oxides: superconductivity and interfaces
  • 批准号:
    RGPIN-2018-04878
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $2.99万
  • 财政年份:
    2021
  • 负责人:
    Atkinson, William
  • 依托单位:
Theory of complex oxides: superconductivity and interfaces
  • 批准号:
    RGPIN-2018-04878
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $2.99万
  • 财政年份:
    2019
  • 负责人:
    Atkinson, William
  • 依托单位:
Theory of complex oxides: superconductivity and interfaces
  • 批准号:
    RGPIN-2018-04878
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $2.99万
  • 财政年份:
    2018
  • 负责人:
    Atkinson, William
  • 依托单位:
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  • 项目类别:
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  • 资助金额:
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  • 批准年份:
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  • 负责人:
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