Ultra-Compact Low-Power Photonic Network-on-Chip

超紧凑低功耗光子片上网络

• 批准号: 418352-2012
• 负责人: Ménard, Michaël
• 金额: $ 1.6万
• 依托单位: Université du Québec à Montréal
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2014
• 资助国家: 加拿大
• 起止时间: 2014-01-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=551360
• 关键词: Ultra; Compact; Low; Power; Photonic

As the computing capacity of microelectronic chips increases, thanks to continuous improvements in speed and transistor density, the flows of information they generate are becoming harder to handle. As a result, the electrical interconnections between chips and even between logical units within a chip are becoming bottlenecks. With aggregate bandwidths exceeding one Tb/s, optical networks have demonstrated the potential of light to transmit information, and now it can be used to resolve the challenges arising at the chip scale. Silicon photonics has demonstrated that optical devices can be manufactured using CMOS compatible processes but there are still numerous challenges that must be addressed to efficiently combine optical and electronic circuits on the same chip. For instance, the requirements on the silicon and buried oxide layers of silicon-on-insulator wafers differ greatly depending on whether they are used for optical or electronic applications.

随着微电子芯片计算能力的提高，由于速度和晶体管密度的不断提高，它们产生的信息流变得越来越难以处理。 因此，芯片之间甚至芯片内的逻辑单元之间的电互连正在成为瓶颈。 随着总带宽超过1 Tb/s，光网络已经证明了光传输信息的潜力，现在它可以用来解决芯片级出现的挑战。 硅光子学已经证明，可以使用CMOS兼容工艺制造光学器件，但是仍然存在必须解决的许多挑战，以在同一芯片上有效地联合收割机组合光学和电子电路。 例如，对绝缘体上硅晶片的硅和埋氧层的要求根据它们是否用于光学或电子应用而有很大不同。