Switchable Persistent Spin Helix Devices

可切换的持续自旋螺旋装置

• 批准号: 2314614
• 负责人: Jian Shi
• 金额: $ 45万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-10-01 至 2026-09-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2314614&HistoricalAwards=false
• 关键词: Switchable; Persistent; Spin; Helix; Devices

Power dissipation and energy consumption are a key limiting factor in the future scalability of present computing technologies based on silicon field-effect transistors. Due to their potential for a low switching energy, spintronic devices that leverage the spin of electrons to carry information instead of their charge have long been pursued as an alternative approach, both for digital computing and analog devices. However, realizing the potential of spintronic devices requires overcoming a few basic challenges. First, weak spin-orbit coupling in conventional spintronic materials such as GaAs necessitates transport of electrons over large devices to allow control of the spin. In contrast, using a material with high spin-orbit coupling to make smaller devices leads to rapid loss of spin information due to dephasing: spins rapidly rotating and becoming out of phase with each other. The PIs propose to address these two challenges by leveraging materials with a special class of spin behavior called the persistent spin helix, where electron spins remain in phase even when rotating rapidly, enabling spin information to be retained longer even in high spin-orbit materials. Specifically, by using electric-field tunable persistent spin helix in van der Waals solids with strong spin-orbit coupling, the PIs propose to enable a new class of materials for spintronic devices, where the spin behavior can be sensitively controlled by electric fields and where the device dimensions can be reduced by two to three orders of magnitude due to the significantly stronger spin-orbit coupling. This would help innovate the design of competitive spin field-effect transistors for high-performance and low-power computing. This award also aims to promote research training to historically underrepresented groups in the rapidly growing field of spintronic materials and devices, and thereby contribute to both the technical knowhow and workforce for the development of future microelectronics.The PIs propose to understand the effect of electric field-tuned symmetry and Hamiltonian on the spin texture, spin dynamics, and spin transport of square van der Waals crystals with strong spin-orbit coupling for spintronic devices. With the square symmetry of the basal plane and natural quantum well structures of selected materials, when an external electric field is applied along desired crystallographic orientations, persistent spin helix-type spin-orbit field is expected. With persistent spin helix states and strong spin-orbit coupling, the PIs expect to achieve electric field/electric voltage-switchable symmetry-protected long-range coherent spin transport. The model materials include air-stable, lithography-friendly van der Waals crystals Bi2O2Se and BiOI, and the model devices include persistent spin helix-based spin field effect transistors. The proposed approach for enabling and tuning persistent spin helix does not require careful balance between Rashba and Dresselhaus fields commonly seen in III-V. This makes the proposed model systems a robust platform for exploring spin field effect transistor. The PIs will grow single crystalline orientation-controlled spintronic tetragonal van der Waals semiconductors and fabricate persistent spin helix-based field effect transistors. The PIs will computationally predict and experimentally reveal the spin-polarized band structure, and dynamics and wavelength of persistent spin helix in the model materials and devices. The PIs will also demonstrate the proof-of-concept persistent spin helix-based field effect transistors and reveal the effects of device structure/dimension, gate dielectrics, external voltage/polarization, and temperature on the characteristics and performance of the spin field effect transistor.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

功率耗散和能量消耗是基于硅场效应晶体管的当前计算技术的未来可扩展性的关键限制因素。由于它们具有低开关能量的潜力，利用电子的自旋来携带信息而不是它们的电荷的自旋电子器件长期以来一直被追求作为数字计算和模拟器件的替代方法。然而，实现自旋电子器件的潜力需要克服一些基本挑战。首先，在传统的自旋电子材料如GaAs中，弱的自旋轨道耦合需要在大型器件上传输电子以控制自旋。相比之下，使用具有高自旋-轨道耦合的材料来制造更小的器件会导致自旋信息的快速丢失，这是由于失相：自旋快速旋转并彼此异相。PI建议通过利用具有称为持久自旋螺旋的特殊自旋行为的材料来解决这两个挑战，其中电子自旋即使在快速旋转时也保持同相，即使在高自旋轨道材料中也能够更长时间地保留自旋信息。具体地说，通过在具有强自旋轨道耦合的货车范德华固体中使用电场可调谐的持久自旋螺旋，PI提出能够实现用于自旋电子器件的一类新材料，其中自旋行为可以由电场灵敏地控制，并且其中由于显著更强的自旋轨道耦合，器件尺寸可以减小两到三个数量级。这将有助于创新设计具有竞争力的自旋场效应晶体管，以实现高性能和低功耗计算。该奖项还旨在促进对快速发展的自旋电子材料和器件领域中历史上代表性不足的群体的研究培训，从而为未来微电子学的发展贡献技术知识和劳动力。PI建议了解电场调谐对称性和哈密顿量对自旋织构，自旋动力学，以及自旋电子器件中强自旋轨道耦合的方货车德瓦耳斯晶体的自旋输运。由于所选材料的基底平面的正方对称性和天然的量子阱结构，当沿沿着所需的晶体学取向施加外电场时，预期会产生持续的自旋螺旋型自旋轨道场。具有持续的自旋螺旋态和强的自旋轨道耦合，PI有望实现电场/电压可切换的自旋保护长程相干自旋输运。模型材料包括空气稳定的、光刻友好的货车范德华晶体Bi 2 O 2 Se和BiOI，并且模型器件包括基于持续自旋螺旋的自旋场效应晶体管。所提出的用于启用和调谐持久自旋螺旋的方法不需要在III-V族中常见的Rashba场和Dresselhaus场之间仔细平衡。这使得所提出的模型系统成为用于探索自旋场效应晶体管的稳健平台。PI将生长单晶取向控制的自旋电子四电子货车德瓦尔斯半导体，并制造持久的自旋螺旋基场效应晶体管。PI将通过计算预测和实验揭示模型材料和器件中的自旋极化能带结构，以及持续自旋螺旋的动力学和波长。PI还将展示基于持久自旋螺旋的场效应晶体管的概念验证，并揭示器件结构/尺寸、栅极电流、外部电压/极化，该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查进行评估，被认为值得支持的搜索.