Investigations on fundamental properties/issues of nanowires/structures with applications in solar cell, energy storage, and sensing devices.

研究纳米线/结构的基本性质/问题及其在太阳能电池、储能和传感设备中的应用。

• 批准号: RGPIN-2014-05908
• 负责人: Kahrizi, Mojtaba
• 金额: $ 1.82万
• 依托单位: Concordia University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2016
• 资助国家: 加拿大
• 起止时间: 2016-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=611916
• 关键词: Investigations; fundamental; properties; issues; nanowires

Nanostructures can be used as fundamental elements in manufacturing many devices. Among them, nanostructures made of silicon and zinc oxide, ZnO, with significant physical properties have been the focus of research for a variety applications. Silicon nanowires, besides having many applications in electronic and optoelectronics, are used to fabricate the new generation of sustainable energy devices, such as solar cells. An array of silicon nanowires SiNWs, beside having excellent light antireflection properties, provide opportunities to design light trapping and carrier collection processes independently. Also semiconductor ZnO has been the focus of research for many applications for the last several years because the material is nontoxic, chemically stable, and biocompatible with a direct wide bandgap, strong ionic bonding, and exciton binding energy 60 meV. Despite the significant promises offered by these nanostructures, there are still several challenging issues related to physical properties of these elements; for example, in the case of SiNW solar cells, surface and interface recombination, surface roughness, mechanical and chemical stability, surface morphology, doping control, integration with other modules, and device packaging are some of these issues. In the case of ZnO, in many applications well-distributed and highly oriented NWs are of crucial importance. Furthermore, controllable fabrications of p-type or n-type ZnO NWs are the key for applications in nano optoelectronic devices since, p-type ZnO NWs exhibit a band gap reduction and strong acceptor-related photoluminescence and the n-type NWs have band gap broadening with a strong donor-bound exciton. Therefore, preparing cost-effective and high quality of these nanowires, for any specific application on a large scale and with high throughput, is considered to be very challenging task. The general scope of this proposal is the design, fabrication, and characterization of arrays of silicon and ZnO semiconductor nanowires/nanostructures for various applications. Works will be focused on research and investigations on the fundamental issues related to structures, physical properties, and fabrication of nanostructures with applications in photonics, energy, and sensing devices. The low cost of the developed technique is considered as an important factor. Finally, we design and fabricate devices based on the most promising elements produced in this work; our focus will be on developing a gas ionization sensor (GIS) and photovoltaic devices based on the nanowires/structures grown in this proposal. Therefore, in this proposal the following two main objectives will be studied: 1) Investigating methods to grow low cost but high quality with large throughput of zinc oxide and silicon nanowires. The techniques should enable us to control the morphology, size, aspect ratio, and conductivity of these nanostructures during the growth. Issues like doping, orientation, distribution, and uniformity of the array of nanowires will be addressed. 2) Developing devices based on the generated nano structures described in the first objective. A gas ionization sensor as well as PV devices will be designed and fabricated using the ZnO and silicon nanowires. The possibility of applying these structures for the purpose of hydrogen storage will be investigated. This proposal will have significant impact on reducing our environmental pollutions in two ways: first by developing PV devices to generate clean and renewable energy, and secondly, by developing a miniaturized GIS to detect pollutant gases.

纳米结构可用作制造许多器件的基本元件。其中，由硅和氧化锌制成的纳米结构ZnO具有显著的物理性能，具有多种应用前景，一直是研究的重点。 硅纳米线除了在电子和光电子学方面有许多应用外，还用于制造新一代可持续能源器件，如太阳能电池。硅纳米线SiNW的阵列除了具有优异的光捕获特性之外，还提供了独立设计光捕获和载流子收集过程的机会。 此外，半导体ZnO在过去几年中一直是许多应用的研究焦点，因为该材料无毒，化学稳定，并且具有直接宽带隙，强离子键合和激子结合能60 meV的生物相容性。 尽管这些纳米结构提供了重大的承诺，仍然有几个具有挑战性的问题，这些元素的物理性质，例如，在硅纳米线太阳能电池的情况下，表面和界面复合，表面粗糙度，机械和化学稳定性，表面形态，掺杂控制，与其他模块的集成，和设备封装是这些问题中的一些。在ZnO的情况下，在许多应用中，均匀分布和高度取向的纳米线至关重要。此外，可控制备p型或n型ZnO纳米线是纳米光电器件应用的关键，因为p型ZnO纳米线具有带隙减小和强的受主相关光致发光，而n型纳米线具有带隙加宽和强的施主束缚激子。 因此，制备具有成本效益和高质量的这些纳米线，用于大规模和高产量的任何特定应用，被认为是非常具有挑战性的任务。 本提案的总体范围是硅和ZnO半导体纳米线/纳米结构阵列的设计、制造和表征，用于各种应用。工作将集中在研究和调查有关的结构，物理性质和纳米结构的制造与应用在光子学，能源和传感设备的基本问题。开发技术的低成本被认为是一个重要因素。最后，我们设计和制造设备的基础上，在这项工作中产生的最有前途的元素，我们的重点将是开发一个气体电离传感器（GIS）和光伏器件的基础上的纳米线/结构生长在这个建议。因此，本提案将研究以下两个主要目标： 1)研究低成本高品质氧化锌及矽奈米线之大产量成长方法。该技术应使我们能够控制这些纳米结构的形态，尺寸，纵横比和导电性在生长过程中。纳米线阵列的掺杂、取向、分布和均匀性等问题将得到解决。 2)基于第一个目标中描述的生成的纳米结构开发器件。利用氧化锌与矽奈米线设计并制作气体离子化感测器与光生伏打元件。将研究将这些结构应用于储氢目的的可能性。 这项建议将在两方面对减少我们的环境污染产生重大影响：第一，通过开发光伏器件来产生清洁和可再生能源;第二，通过开发小型GIS来检测污染气体。