RF/Millimeter-wave multi-chip power amplifier module with antenna switch using advanced CMOS technologies

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Modern wireless communication equipment will be required to operate at millimeter-wave (mm-wave) frequencies; to be energy efficient because of battery life time; to enable increasingly high speed data transmission; to operate with multiple antennas for increased versatility in their applications; and to be small. The transmitter front-end module, which delivers the high power level signals to antennas in a wireless transmitter, will play a critical role in achieving the above defined characteristics.This research on Integrated Circuits (IC) technology addresses the necessity for the coexistence of Wireless Local Area Network (WLAN) communication capabilities using 5 GHz carrier signals and mm-wave communication capabilities at 60 GHz, which imposes integration design challenges in the front-end module. This requires semi-conductor technology partitioning as well as circuit design techniques that operate at different power levels, using different semi-conductor processes. The need for a 60 GHz antenna selection switch to accommodate different communication conditions requires the development of a novel CMOS switching network with low losses.This research project will contribute to the advancement of Radiofrequency & mm-wave IC power amplifiers, in particular in regard to power efficiency improvement, CMOS transistor breakdown protection and CMOS switching functions, intended to address the above-mentioned challenges for mm-wave front-end modules. Emphasis will be placed on chip integration in advanced CMOS technologies. The project will also contribute to the formation of highly qualified researchers at the École de technologie supérieure (ÉTS), who will master the skills required at the research, design, and prototyping levels for the development of new semiconductor and mm-wave Micro-Systems-based devices in the Canadian wireless communication industry.