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Development of a protocol for high-resolution Auger and Transmission Electron Microscopy / Spectroscopy analysis on advanced III-V semiconductor devices

Development of a protocol for high-resolution Auger and Transmission Electron Microscopy / Spectroscopy analysis on advanced III-V semiconductor devices
开发先进 III-V 族半导体器件的高分辨率俄歇和透射电子显微镜/光谱分析协议
批准号:
515368-2017
负责人:
Botton, Gianluigi
金额:
$1.82万
依托单位:
依托单位国家:
加拿大
项目类别:
Engage Grants Program
财政年份:
2017
资助国家:
加拿大
项目状态:
已结题
起止时间:
2017-01-01 至 2018-12-31

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中文摘要
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英文摘要
Advanced photonic devices are at the basis of optical telecommunication networks and data centres. Thesedevices are built from complex materials structures, involving several fabrication steps and operate in harshconditions. Knowledge of the structure of these materials is key for developing new devices and understandingthe evolution and degradation of devices during fabrication and operation. In this project we investigatecomponents of photonics integrated circuits using advanced structural and chemical characterization techniqueswith high spatial resolution. We will develop advanced transmission electron microscopy, electron energy lossspectroscopy, and surface analysis methods to characterize, at different lengthscales -from nanometers to theatomic level- the composition and structure of photonic devices. Using these methodologies, we will provide tothe industrial partner, ArtIC Photonics, understanding of the photonic integrated circuits they produce, theevolution of nanoscale components of these devices during fabrication, and the degradation of these devicesduring operating conditions.
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Electron Microscopy of Nanoscale Materials
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