The development of advanced diluted magnetic semiconductors through nonmagnetic element doping and defect engineering for spin transistors

通过非磁性元素掺杂和自旋晶体管缺陷工程开发先进的稀磁半导体

• 批准号: DP110105338
• 负责人: Prof Jiabao Yi
• 金额: $ 54.74万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2011
• 资助国家: 澳大利亚
• 起止时间: 2011-04-08 至 2016-04-07
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP110105338
• 关键词: development; advanced; diluted; magnetic; semiconductors

This project is to develop advanced diluted magnetic semiconductor materials by nonmagnetic element doping and defects engineering for the fabrication of spin devices (for example, spin transistors) and to understand the physics and engineering science of 'spin' behaviour.

该项目旨在通过非磁性元素掺杂和缺陷工程开发先进的稀释磁性半导体材料，用于制造自旋器件（例如自旋晶体管），并了解“自旋”行为的物理和工程科学。