Modelling of photoelastic properties of quaternary (InGa)(AsP) semiconductor materials and its impact on PIC performance using atomistic first-principle techniques

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This proposal addresses a challenge related to control of optical properties of semiconducting materials for**devices used for data centers and long-haul telecommunication networks. Differences in the lattice parameter**between the waveguide material, the cladding layer and the substrate introduce an anisotropic epitaxial stress in**the film, which causes a dispersion of the signal (i.e., different components of a signal travel at different**velocities). This unwanted dispersion hinders the performance of interferometric devices such as switches for**telecommunication applications thereby posing a challenging technical problem. During product development,**if the stress can be accurately predicted then it can be either controlled, or compensated, or could even be made**use of for new device functions. On the other side, the uncontrolled stress could have detrimental effect on the**device performance and lower the production yield. The goal of this project is to provide ArtIC Photonics with**photoelastic material properties of the quaternary compound needed for quantitative modelling of the strain**effects in optical waveguides. The later will be achieved using atomistic first-principle material simulation**modelling. Material properties obtained as a result of our modelling efforts will be integrated into the device**simulation to examine the effects of the strain on device performance and compared with the experimental**measurements performed by the industrial partner (ArtIC Photonics).