Band Engineering of Dirac Materials for Device Applications
Band Engineering of Dirac Materials for Device Applications
批准号:
RGPIN-2016-04793
负责人:
Chang, GapSoo
金额:
$1.6万
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2019
资助国家:
加拿大
项目状态:
已结题
起止时间:
2019-01-01 至 2020-12-31
中文摘要
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英文摘要
This research proposes to develop a scalable method with less complexity to modulate the band structure of two dimensional (2D) Dirac materials including graphene, silicene, and transition metal dichalcogenides for applications in electronics and energy technologies. Patterned decoration of 2D Dirac materials with metallic nanostructures or polymer molecules will be explored as an effective mean to tune the energy band gap in selected areas of 2D Dirac systems while preserving their intrinsic electrical and optical properties. The characterization of detailed electronic structure for the band-engineered materials will be conducted using X-ray absorption and emission spectroscopy at the Canadian Light Source to shed light on the mechanism behind the opening of band gap in 2D materials by surface modification. These band-engineered 2D Dirac materials will ultimately be used to produce high performance transistor and solar cell devices. The quantitative analysis of the device operation parameters (for example, carrier mobility and on/off ration for transistor devices and energy conversion efficiency for solar cell devices) with respect to the surface coverage and type of decorating materials will be conducted in order to achieve the optimized device performance.***The following objectives will be pursued as main directions toward semiconductor Dirac electronics: a) investigation of the effect of metallic nanostructure formation (and followed by oxidation if necessary) and organic material decoration on the band structure of group-IV 2D Dirac materials (graphene and silicene) and transition metal dichalcogenide (MoS2), b) design and fabrication of electronic and photovoltaic device architectures using the selected-area band-engineered materials, and c) optimization of the current-voltage (I-V) characteristics of devices. ***This research program is of great importance to allied research field and industries in Canada as it will not only advance our fundamental knowledge of relativistic quantum mechanical phenomena in low dimensional systems but also help people overcome limitations in current semiconductor technology and prepare for post-silicon electronics. This research is also important to Canada as it involves information and communication technologies (ICT), nanotechnology, and energy technologies which are among the areas of Rs Science, Technology and Innovation Strategy.
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Band Engineering of Dirac Materials for Device Applications
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批准号:RGPIN-2016-04793
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.21万
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财政年份:2021
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负责人:Chang, GapSoo
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依托单位:
Band Engineering of Dirac Materials for Device Applications
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批准号:RGPIN-2016-04793
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2018
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负责人:Chang, GapSoo
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依托单位:
Band Engineering of Dirac Materials for Device Applications
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批准号:RGPIN-2016-04793
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2017
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负责人:Chang, GapSoo
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依托单位:
Band Engineering of Dirac Materials for Device Applications
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批准号:RGPIN-2016-04793
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2016
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负责人:Chang, GapSoo
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依托单位:
Development of high spin-polarization spintronic devices based on organic molecular semiconductors
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批准号:288222-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2015
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负责人:Chang, GapSoo
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依托单位:
Development of high spin-polarization spintronic devices based on organic molecular semiconductors
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批准号:288222-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2014
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负责人:Chang, GapSoo
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依托单位:
Development of high spin-polarization spintronic devices based on organic molecular semiconductors
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批准号:288222-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2013
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负责人:Chang, GapSoo
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依托单位:
Development of high spin-polarization spintronic devices based on organic molecular semiconductors
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批准号:288222-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2012
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负责人:Chang, GapSoo
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依托单位:
Development of high spin-polarization spintronic devices based on organic molecular semiconductors
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批准号:288222-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2011
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负责人:Chang, GapSoo
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依托单位:
Development of inorganic/organic-based diluted magnetic semiconductors for spin-polarized transistors
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批准号:288222-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.23万
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财政年份:2009
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负责人:Chang, GapSoo
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依托单位:
Development of inorganic/organic-based diluted magnetic semiconductors for spin-polarized transistors
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批准号:288222-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.23万
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财政年份:2008
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负责人:Chang, GapSoo
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依托单位:
Development of inorganic/organic-based diluted magnetic semiconductors for spin-polarized transistors
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批准号:288222-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.23万
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财政年份:2007
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负责人:Chang, GapSoo
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依托单位:
Study of nanostructured magnetic films and multi-element compounds using synchrotron radiation soft x-ray spectroscopy.
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批准号:288222-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2006
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负责人:Chang, GapSoo
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依托单位:
Study of nanostructured magnetic films and multi-element compounds using synchrotron radiation soft x-ray spectroscopy.
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批准号:288222-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2005
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负责人:Chang, GapSoo
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依托单位:
Study of nanostructured magnetic films and multi-element compounds using synchrotron radiation soft x-ray spectroscopy.
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批准号:288222-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2004
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负责人:Chang, GapSoo
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依托单位:
国内基金
海外基金
Frontiers of Environmental Science & Engineering
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批准号:51224004
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项目类别:专项基金项目
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资助金额:20.0万元
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批准年份:2012
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负责人:朱建军
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依托单位:
Chinese Journal of Chemical Engineering
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批准号:21224004
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项目类别:专项基金项目
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资助金额:20.0万元
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批准年份:2012
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负责人:廖叶华
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依托单位:
Chinese Journal of Chemical Engineering
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批准号:21024805
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项目类别:专项基金项目
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资助金额:20.0万元
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批准年份:2010
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负责人:廖叶华
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依托单位: