Band Engineering of Dirac Materials for Device Applications
Band Engineering of Dirac Materials for Device Applications
批准号:
RGPIN-2016-04793
负责人:
Chang, GapSoo
金额:
$3.21万
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2021
资助国家:
加拿大
项目状态:
已结题
起止时间:
2021-01-01 至 2022-12-31
中文摘要
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英文摘要
Band engineering; Dirac materials; Electronic structure; Fermi level tuning; Graphene; Graphene oxide; Metal doping; Surface decoration; Topological insulator; X-ray spectroscopy
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Band Engineering of Dirac Materials for Device Applications
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批准号:RGPIN-2016-04793
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2019
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负责人:Chang, GapSoo
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依托单位:
Band Engineering of Dirac Materials for Device Applications
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批准号:RGPIN-2016-04793
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2018
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负责人:Chang, GapSoo
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依托单位:
Band Engineering of Dirac Materials for Device Applications
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批准号:RGPIN-2016-04793
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2017
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负责人:Chang, GapSoo
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依托单位:
Band Engineering of Dirac Materials for Device Applications
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批准号:RGPIN-2016-04793
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2016
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负责人:Chang, GapSoo
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依托单位:
Development of high spin-polarization spintronic devices based on organic molecular semiconductors
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批准号:288222-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2015
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负责人:Chang, GapSoo
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依托单位:
Development of high spin-polarization spintronic devices based on organic molecular semiconductors
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批准号:288222-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2014
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负责人:Chang, GapSoo
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依托单位:
Development of high spin-polarization spintronic devices based on organic molecular semiconductors
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批准号:288222-2011
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项目类别:Discovery Grants Program - Individual
-
资助金额:$1.09万
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财政年份:2013
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负责人:Chang, GapSoo
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依托单位:
Development of high spin-polarization spintronic devices based on organic molecular semiconductors
-
批准号:288222-2011
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项目类别:Discovery Grants Program - Individual
-
资助金额:$1.09万
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财政年份:2012
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负责人:Chang, GapSoo
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依托单位:
Development of high spin-polarization spintronic devices based on organic molecular semiconductors
-
批准号:288222-2011
-
项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2011
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负责人:Chang, GapSoo
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依托单位:
Development of inorganic/organic-based diluted magnetic semiconductors for spin-polarized transistors
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批准号:288222-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.23万
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财政年份:2009
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负责人:Chang, GapSoo
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依托单位:
Development of inorganic/organic-based diluted magnetic semiconductors for spin-polarized transistors
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批准号:288222-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.23万
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财政年份:2008
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负责人:Chang, GapSoo
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依托单位:
Development of inorganic/organic-based diluted magnetic semiconductors for spin-polarized transistors
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批准号:288222-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.23万
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财政年份:2007
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负责人:Chang, GapSoo
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依托单位:
Study of nanostructured magnetic films and multi-element compounds using synchrotron radiation soft x-ray spectroscopy.
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批准号:288222-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2006
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负责人:Chang, GapSoo
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依托单位:
Study of nanostructured magnetic films and multi-element compounds using synchrotron radiation soft x-ray spectroscopy.
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批准号:288222-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2005
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负责人:Chang, GapSoo
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依托单位:
Study of nanostructured magnetic films and multi-element compounds using synchrotron radiation soft x-ray spectroscopy.
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批准号:288222-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2004
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负责人:Chang, GapSoo
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依托单位:
国内基金
海外基金
Frontiers of Environmental Science & Engineering
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批准号:51224004
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项目类别:专项基金项目
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资助金额:20.0万元
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批准年份:2012
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负责人:朱建军
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依托单位:
Chinese Journal of Chemical Engineering
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批准号:21224004
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项目类别:专项基金项目
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资助金额:20.0万元
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批准年份:2012
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负责人:廖叶华
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依托单位:
Chinese Journal of Chemical Engineering
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批准号:21024805
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项目类别:专项基金项目
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资助金额:20.0万元
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批准年份:2010
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负责人:廖叶华
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依托单位: