课题基金 / 基金详情

Technology development for a high power three-phase electric vehicle charger using GaN devices

Technology development for a high power three-phase electric vehicle charger using GaN devices
使用GaN器件的高功率三相电动汽车充电器的技术开发
批准号:
518065-2017
负责人:
Liu, YanFei
金额:
$5.79万
依托单位:
依托单位国家:
加拿大
项目类别:
Collaborative Research and Development Grants
财政年份:
2019
资助国家:
加拿大
项目状态:
已结题
起止时间:
2019-01-01 至 2020-12-31

项目摘要

项目成果

Liu, YanFei的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
Greenhouse gas traps the earth's heat and contributes to global warming. In 2015, about 27% of the total greenhouse gas emission in U.S was from transportation. Electric Vehicles (EVs) are one way to reduce greenhouse gas emission. Major automobile manufacturers have set ambitious goals to gradually phase out the combustion engine by 2050. Due to limited driving range, EVs require frequent charging. Fast EV charging stations are one critical step to achieve widespread adoption of EVs. They can be built anywhere charging is in high demand, such as parking lots of office buildings, supermarkets and service stations. According to a recent report, the global EV Charger market is forecast to grow to more than 12.7 million units in 2020. In this project, the technologies for a 15kW 3-phase AC input EV charger will be developed using a Gallium Nitride (GaN) switch. It can charge an EV battery from 0% to 80% in 30 minutes, the key factor for wide adoption of EVs. Existing off-board 3-phase EV chargers are mostly designed with IGBT (Insulated Gate Bipolar Transistor) or SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor) based power electronics technology, because of the high voltage requirement. A Gallium Nitride (GaN) switch can provide significantly better performance than IGBT and MOSFET and offers the opportunity to significantly improve performance. However, GaN switches have a much lower voltage rating (650V) than is required in existing design. In this project, a new power architecture will be developed for a 3-phase AC EV charger that is optimized for GaN devices. It is expected 97.5% or more full load efficiency will be achieved - the best efficiency in the world. The success of this project will demonstrate the superior performance of the GaN switches produced by the industry partner, promoting its GaN switch sales in high voltage, high power application like EV charger. It will also encourage EV ownership in Canada, making Canada the world leader in using green energy.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Power Cycle Modulation Control for High Efficiency GaN Switch Based Power Supplies
  • 批准号:
    RGPIN-2019-06635
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $4.66万
  • 财政年份:
    2022
  • 负责人:
    Liu, YanFei
  • 依托单位:
Technology Development for High Efficiency High Power Density EV DC - DC Converter
  • 批准号:
    549915-2020
  • 项目类别:
    Alliance Grants
  • 资助金额:
    $6.99万
  • 财政年份:
    2021
  • 负责人:
    Liu, YanFei
  • 依托单位:
Power Cycle Modulation Control for High Efficiency GaN Switch Based Power Supplies
  • 批准号:
    RGPIN-2019-06635
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $4.66万
  • 财政年份:
    2021
  • 负责人:
    Liu, YanFei
  • 依托单位:
Power Cycle Modulation Control for High Efficiency GaN Switch Based Power Supplies
  • 批准号:
    RGPIN-2019-06635
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $4.66万
  • 财政年份:
    2020
  • 负责人:
    Liu, YanFei
  • 依托单位:
国内基金
海外基金
损伤线粒体传递机制介导成纤维细胞/II型肺泡上皮细胞对话在支气管肺发育不良肺泡发育阻滞中的作用
  • 批准号:
    82371721
  • 项目类别:
    面上项目
  • 资助金额:
    49.00万元
  • 批准年份:
    2023
  • 负责人:
    王星云
  • 依托单位:
增强子在小鼠早期胚胎细胞命运决定中的功能和调控机制研究
  • 批准号:
    82371668
  • 项目类别:
    面上项目
  • 资助金额:
    52.00万元
  • 批准年份:
    2023
  • 负责人:
    乔云波
  • 依托单位:
MAP2的m6A甲基化在七氟烷引起SST神经元树突发育异常及精细运动损伤中的作用机制研究
  • 批准号:
    82371276
  • 项目类别:
    面上项目
  • 资助金额:
    47.00万元
  • 批准年份:
    2023
  • 负责人:
    严佳
  • 依托单位:
"胚胎/生殖细胞发育特性激活”促进“神经胶质瘤恶变”的机制及其临床价值研究
  • 批准号:
    82372327
  • 项目类别:
    面上项目
  • 资助金额:
    49.00万元
  • 批准年份:
    2023
  • 负责人:
    马展
  • 依托单位: