Porous germanium Efficient Epitaxial LayEr Release (PEELER) for low cost high performance III-V solar cells
用于低成本高性能 III-V 太阳能电池的多孔锗高效外延层释放 (PEELER)
基本信息
- 批准号:537960-2018
- 负责人:
- 金额:$ 22.89万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Collaborative Research and Development Grants
- 财政年份:2020
- 资助国家:加拿大
- 起止时间:2020-01-01 至 2021-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Clean, renewable and inexpensive energy is not only this century's most important challenge, but also it is most likely one of the largest financial opportunities for developed countries. Contrary to the current fossil fuel economy, the winners of the upcoming clean energy market will not be the ones possessing the resource, however it would be rather the ones controlling the technology. Photovoltaic generation of electricity is expected to play a major role in this emerging market, but several hurdles must be overcome if this technology is to reach the characteristics that will enable massive adoption, such as improved energy conversion efficiency, production and installation costs. This project aims to address a technology challenge that lies at the heart of these hurdles - the cost of the materials for high-efficiency photovoltaic (PV) solar cells. PV cells based on silicon have been maturing for a number of years and their cost is falling, but their maximum efficiency remains at about 20%. Fortunately, the Canadian researchers in this team have achieved cell efficiencies of 42% or more using advanced III-V semiconductor structures that emerged from their recent leadership in telecommunications component technology. Even though the multi-junction cells made from these materials are more expensive than silicon cells, they are able to function at very high levels of illumination and produce more kWh of energy for the same illumination as a silicon cell. Taking advantage of this property, solar system developers have engineered movable lensing systems to track and focus the sun's rays onto small areas of the highly-efficient cells, so that less of the material is needed. To further reduce the material cost burden this project will demonstrate how specially-prepared germanium (Ge) substrates can be used to grow the necessary solar cell layers, which are then removed from the substrate and mounted on a low-cost heat-sink, thereby freeing the Ge substrate to be used again. The net cost savings and increased electrical output of these cells create a winning combination that will further motivate the deployment of solar power for homes and businesses in Canada and globally, and in so doing will help to preserve the environment.
清洁、可再生和廉价的能源不仅是本世纪最重要的挑战,而且很可能是发达国家最大的金融机会之一。与当前的化石燃料经济相反,即将到来的清洁能源市场的赢家将不是拥有资源的人,而是控制技术的人。光伏发电预计将在这个新兴市场中发挥重要作用,但如果这项技术要达到大规模采用的特点,必须克服几个障碍,例如提高能源转换效率,生产和安装成本。该项目旨在解决这些障碍的核心技术挑战-高效光伏(PV)太阳能电池材料的成本。基于硅的光伏电池已经成熟了很多年,它们的成本也在下降,但它们的最大效率仍然保持在20%左右。幸运的是,该团队中的加拿大研究人员使用先进的III-V半导体结构实现了42%或更高的电池效率,这些结构来自他们最近在电信组件技术方面的领导地位。尽管由这些材料制成的多结电池比硅电池更昂贵,但它们能够在非常高的照明水平下工作,并且在与硅电池相同的照明下产生更多的kWh能量。利用这一特性,太阳能系统开发人员设计了可移动透镜系统,以跟踪和聚焦太阳光线到高效电池的小区域上,从而减少所需的材料。为了进一步降低材料成本负担,该项目将展示如何使用专门制备的锗(Ge)衬底来生长必要的太阳能电池层,然后将其从衬底上移除并安装在低成本的散热器上,从而释放Ge衬底以再次使用。这些电池的净成本节省和增加的电力输出创造了一个成功的组合,这将进一步推动加拿大和全球家庭和企业部署太阳能发电,从而有助于保护环境。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
数据更新时间:{{ journalArticles.updateTime }}
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
Boucherif, Abderraouf其他文献
Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates
- DOI:
10.1116/1.5088962 - 发表时间:
2019-05-01 - 期刊:
- 影响因子:1.4
- 作者:
Diallo, Thierno Mamoudou;Mbeunmi, Alex Brice Poungoue;Boucherif, Abderraouf - 通讯作者:
Boucherif, Abderraouf
Wafer-scale Ge freestanding membranes for lightweight and flexible optoelectronics
- DOI:
10.1016/j.mtadv.2023.100373 - 发表时间:
2023-04-28 - 期刊:
- 影响因子:10
- 作者:
Hanus, Tadeas;Ilahi, Bouraoui;Boucherif, Abderraouf - 通讯作者:
Boucherif, Abderraouf
Extreme temperature stability of thermally insulating graphene-mesoporous-silicon nanocomposite
- DOI:
10.1088/1361-6528/aaac40 - 发表时间:
2018-04-06 - 期刊:
- 影响因子:3.5
- 作者:
Kolhatkar, Gitanjali;Boucherif, Abderraouf;Ruediger, Andreas - 通讯作者:
Ruediger, Andreas
In-Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy
- DOI:
10.1002/smll.202101890 - 发表时间:
2021-11-10 - 期刊:
- 影响因子:13.3
- 作者:
Diallo, Thierno Mamoudou;Aziziyan, Mohammad Reza;Boucherif, Abderraouf - 通讯作者:
Boucherif, Abderraouf
Large-Scale Formation of Uniform Porous Ge Nanostructures with Tunable Physical Properties
- DOI:
10.1002/admi.202202495 - 发表时间:
2023-04-13 - 期刊:
- 影响因子:5.4
- 作者:
Hanus, Tadeas;Arias-Zapata, Javier;Boucherif, Abderraouf - 通讯作者:
Boucherif, Abderraouf
Boucherif, Abderraouf的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('Boucherif, Abderraouf', 18)}}的其他基金
Potential of Graphene as a Universal Substrate for Disruptive Epitaxial Devices
石墨烯作为破坏性外延器件通用基底的潜力
- 批准号:
RGPIN-2018-06091 - 财政年份:2022
- 资助金额:
$ 22.89万 - 项目类别:
Discovery Grants Program - Individual
Potential of Graphene as a Universal Substrate for Disruptive Epitaxial Devices
石墨烯作为破坏性外延器件通用基底的潜力
- 批准号:
RGPIN-2018-06091 - 财政年份:2021
- 资助金额:
$ 22.89万 - 项目类别:
Discovery Grants Program - Individual
Porous germanium Efficient Epitaxial LayEr Release (PEELER) for low cost high performance III-V solar cells
用于低成本高性能 III-V 太阳能电池的多孔锗高效外延层释放 (PEELER)
- 批准号:
537960-2018 - 财政年份:2021
- 资助金额:
$ 22.89万 - 项目类别:
Collaborative Research and Development Grants
Potential of Graphene as a Universal Substrate for Disruptive Epitaxial Devices
石墨烯作为破坏性外延器件通用基底的潜力
- 批准号:
RGPIN-2018-06091 - 财政年份:2020
- 资助金额:
$ 22.89万 - 项目类别:
Discovery Grants Program - Individual
Potential of Graphene as a Universal Substrate for Disruptive Epitaxial Devices
石墨烯作为破坏性外延器件通用基底的潜力
- 批准号:
RGPIN-2018-06091 - 财政年份:2019
- 资助金额:
$ 22.89万 - 项目类别:
Discovery Grants Program - Individual
Porous germanium Efficient Epitaxial LayEr Release (PEELER) for low cost high performance III-V solar cells
用于低成本高性能 III-V 太阳能电池的多孔锗高效外延层释放 (PEELER)
- 批准号:
537960-2018 - 财政年份:2019
- 资助金额:
$ 22.89万 - 项目类别:
Collaborative Research and Development Grants
Potential of Graphene as a Universal Substrate for Disruptive Epitaxial Devices
石墨烯作为破坏性外延器件通用基底的潜力
- 批准号:
RGPIN-2018-06091 - 财政年份:2018
- 资助金额:
$ 22.89万 - 项目类别:
Discovery Grants Program - Individual
Potential of Graphene as a Universal Substrate for Disruptive Epitaxial Devices
石墨烯作为破坏性外延器件通用基底的潜力
- 批准号:
DGECR-2018-00047 - 财政年份:2018
- 资助金额:
$ 22.89万 - 项目类别:
Discovery Launch Supplement
Novel high efficiency solar cell structures for 1500X sun concentration
新型高效太阳能电池结构,可实现 1500 倍的阳光集中度
- 批准号:
521784-2017 - 财政年份:2017
- 资助金额:
$ 22.89万 - 项目类别:
Engage Grants Program
相似海外基金
Study on p-type doping of ultra wide bandgap rutile-structured germanium oxide
超宽带隙金红石结构氧化锗的p型掺杂研究
- 批准号:
24K17312 - 财政年份:2024
- 资助金额:
$ 22.89万 - 项目类别:
Grant-in-Aid for Early-Career Scientists
EPSRC-SFI: Developing a Quantum Bus for germanium hole-based spin qubits on silicon (GeQuantumBus)
EPSRC-SFI:为硅上基于锗空穴的自旋量子位开发量子总线 (GeQuantumBus)
- 批准号:
EP/X039889/1 - 财政年份:2024
- 资助金额:
$ 22.89万 - 项目类别:
Research Grant
EPSRC-SFI: Developing a Quantum Bus for germanium hole based spin qubits on silicon (Quantum Bus)
EPSRC-SFI:为硅上基于锗空穴的自旋量子位开发量子总线(量子总线)
- 批准号:
EP/X040380/1 - 财政年份:2024
- 资助金额:
$ 22.89万 - 项目类别:
Research Grant
FuSe-TG: Co-Design of Germanium Oxide-based Semiconductors from Deposition to Devices
FuSe-TG:氧化锗基半导体从沉积到器件的协同设计
- 批准号:
2235208 - 财政年份:2023
- 资助金额:
$ 22.89万 - 项目类别:
Standard Grant
Development of Germanium Ring-Contact Detectors for LEGEND-1000
开发用于 LEGEND-1000 的锗环接触探测器
- 批准号:
2310027 - 财政年份:2023
- 资助金额:
$ 22.89万 - 项目类别:
Standard Grant
The research on thermal conductivities of one-dimensional van der Waals heterostructures
一维范德华异质结构的热导率研究
- 批准号:
22KJ0648 - 财政年份:2023
- 资助金额:
$ 22.89万 - 项目类别:
Grant-in-Aid for JSPS Fellows
EPSRC-SFI: Developing a Quantum Bus for germanium hole based spin qubits on silicon
EPSRC-SFI:为硅上基于锗空穴的自旋量子位开发量子总线
- 批准号:
EP/X039757/1 - 财政年份:2023
- 资助金额:
$ 22.89万 - 项目类别:
Research Grant
Affordable Shortwave Infrared Spectroscopy for Stroke Risk Screening in Children with Sickle Cell Disease
经济实惠的短波红外光谱仪用于镰状细胞病儿童中风风险筛查
- 批准号:
10730967 - 财政年份:2023
- 资助金额:
$ 22.89万 - 项目类别:
Rapid and high-contrast photothermal microscopy with a novel tunable ZGP source
具有新型可调谐 ZGP 光源的快速高对比度光热显微镜
- 批准号:
10600781 - 财政年份:2023
- 资助金额:
$ 22.89万 - 项目类别:
Point contact germanium detectors for rare event searches
用于罕见事件搜索的点接触锗探测器
- 批准号:
SAPIN-2017-00023 - 财政年份:2022
- 资助金额:
$ 22.89万 - 项目类别:
Subatomic Physics Envelope - Individual