Bottom-up Design and Optimization of Ferroelectric Van der Waals Heterostructure Electronics

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While the past few decades have brought remarkable evolutions in computers and consumer electronics, there remains significant untapped potential for future mobile/wearable electronics such as ultra-low-power (for significantly longer battery life) health monitoring devices and wrinkled e-textiles. Such breakthrough electronics can be built using new technologies based on novel material systems and design innovations. Two-dimensional (2D) materials are strong contenders to radically shift the technology of electronic devices due to their unique electrical, mechanical and surface properties. One of the most prominent features of 2D materials is their ability to be stacked vertically using a simple fabrication process, leading to structures called van der Waals (vdW) heterostructures. While these structures can provide seemingly endless opportunities for novel device design, state-of-the-art 2D material devices are far from achieving optimal performances, largely due to a lack of proper design tools. Moreover, if ferroelectric (FE) materials are combined with vdW heterostructures to reduce power loss, device designs become even more challenging. The overall objective of this five-year research program is to advance knowledge in novel FE vdW heterostructure electronic devices by means of modeling and simulation. In particular, a state-of-the-art design tool will be developed to simulate, analyze, and optimize such devices. To ensure high-level accuracy, theoretical findings will be calibrated against experimental results through international research collaborations. Outcomes of the research program will include an in-depth theoretical understanding of FE vdW heterostructure devices and approaches to engineering the performance by exploiting material properties and device parameters. Moreover, powerful simulation software will be available for use by researchers within academia as well as device engineers in semiconductor industry. Economic benefits will accrue to Canada-based and international semiconductor companies (compound annual growth rate of 9% is forecasted for the 2019-2023 period with expected market value of US $704B in 2023), through the provision of a pre-validated design tool that enables the development of 2D electronic devices and reduced R&D costs. Students participating in this research program will acquire advanced knowledge of novel 2D materials, FE materials and electronic devices as well as hands-on technical skills required for device engineers in major semiconductor companies (e.g., Intel, Samsung, IBM), which will make them highly sought after. In addition, they will also be well prepared for academic jobs by disseminating research discovery at international conferences and in high-impact journals. This program will strengthen Canada's research potential by training the next generation of innovators in the competitive nanoelectronics field.