Mechanical reliability and strain engineering of semiconducting 2D materials

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Semiconducting two-dimensional (2D) materials are at the forefront of next-generation electronic materials development for applications in quantum transistors, flexible electronics, optoelectronics, and energy storage. These 2D materials offer atomic scale thicknesses allowing greater transistor density and extreme flexibility. However, while the mechanical properties of these 2D materials in their pristine forms are exceptional, the wide existence of defect of various types, densities, and configurations drastically reduces the mechanical properties in an elusive way. A quantitative characterization of the atomic structure-mechanical property relation of 2D materials can provide quantitative design guidelines for the stress-tolerant devices with a high-level confidence and thus is critical to the success of the device applications.This project is centered on the atomic structure and mechanical characterization, and the development of standards and best practices for the implementation of semiconducting 2D materials into electronic device design. A successful conclusion to this project will enable our industry partner Hitachi to translate the findings created by the project into standard characterization protocols, quantitative stress design requirements of 2D materials that will be central to next-generation device manufacturing systems. Not only will this enable the future of 2D material electronic device manufacturing in Canada, but this will position Hitachi as the world leader in enabling this design requirement and supplying of test systems for production facilities. Additionally, training of engineering students in the testing and operating of these fundamental technologies will enable knowledge translation that is crucial to developing Canadian expertise in 2D material device design.