Opto-electronic Properties of Defects in WSe2

只有一层厚度的二维材料具有非凡的光电性能，这使得它在从太阳能电池到高效光学显示器等领域具有潜在的令人兴奋的应用。一个主要的基本挑战是了解缺陷对相关性能的影响。我们建议建立一个由世界级专家组成的国际合作，研究缺陷如何影响单层WS2的光电性质。一个国际团队在生长和表征这种材料方面拥有互补的专业知识，使用原子分辨原子力显微镜技术结合超快激光激发(Grutter，McGill)、先进的光子电子光谱技术(Regoutz，伦敦大学学院)和前沿建模(Shluger，伦敦大学学院)，将增进我们对这些有希望的材料的理解，为HQP提供出色的培训，并为成功的国际合作建立记录。

Two dimensional materials, just one layer thin, have extraordinary optoelectronic properties leading to potentially exciting applications in fields ranging from solar cells to highly efficient optical displays. A major fundamental challenge is to understand the effect of defects on the relevant properties. We propose to establish an international collaboration of world-class experts to study how defects affect opto-electronic properties in a single layer of WS2. An international team with complementary expertise in growing and characterizing this material using atomically resolved atomic force microscopy techniques combined with ultrafast laser excitation (Grutter, McGill), advanced photon electron spectroscopy techniques (Regoutz, University College London) and leading edge modeling (Shluger, University College London) will advance our understanding of these promising materials, provide excellent training for HQP and establish a track-record for a successful international collaboration.