Opto-electronic Properties of Defects in WSe2

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Two dimensional materials, just one layer thin, have extraordinary optoelectronic properties leading to potentially exciting applications in fields ranging from solar cells to highly efficient optical displays. A major fundamental challenge is to understand the effect of defects on the relevant properties. We propose to establish an international collaboration of world-class experts to study how defects affect opto-electronic properties in a single layer of WS2. An international team with complementary expertise in growing and characterizing this material using atomically resolved atomic force microscopy techniques combined with ultrafast laser excitation (Grutter, McGill), advanced photon electron spectroscopy techniques (Regoutz, University College London) and leading edge modeling (Shluger, University College London) will advance our understanding of these promising materials, provide excellent training for HQP and establish a track-record for a successful international collaboration.