目前，考虑到元素的性能，一些资源缺乏且有毒元素，如Ga、As、In、P、Se、Pb、Te等，仍被大量用来制备LED、半导体激光器、太阳能电池等半导体器件，这不利于创造一个资源循环、环境共生型的和谐社会。而环境友好半导体材料β-FeSi2、Mg2Si是由地球含量丰富、无毒的、对环境友好的Si、Mg、Fe元素构成，并且和传统的Si工艺相兼容，在光电子器件、电子器件、能量器件领域具有重要的应用前景。. 本项目在前期成功制备环境友好半导体材料β-FeSi2、Mg2Si薄膜的研究基础上，开展基于β-FeSi2、Mg2Si材料的发光二极管和光传感器的设计与研究，主要内容包括：1）进一步完善β-FeSi2、Mg2Si薄膜的制备工艺；2）发光二极管和光传感器芯片设计与制备；3）器件的性能测试与机理分析。. 预期成果：发表论文3-6篇，申请专利1-3项，培养博士生1-3人，硕士生5-8人

At present, scarce and toxic elements such as Ga, As, In, P, Se, Pb, Te, have been used widely to fabricate compound semiconducting optical devices such as LED and semiconducting laser, and solar cells, which are unbeneficial to the development of harmonious society with resources recycling and symbiosis environment. However,Ecologically friendly semiconducting materials β-FeSi2 and Mg2Si consist of Si, Mg, Fe elements which are abundant, toxic and ecologically friendly. In addition, these semiconducting silicides are compatible with the current Si technology, and have important applications on optoelectronic, electronic and power devices.. The project are focused on the design and investigation of the light emitting diode and light sensor based on the ecologically friendly semiconducting materialβ-FeSi2 and Mg2Si, which have been prepared successfully. The main contents are as follows: 1) improvement of the fabricating technology for preparing β-FeSi2 and Mg2Si films,2)chip design of the light emitting diode and light sensor,and 3)performance measurement and mechanism analysis of devices.. The deliverables of the project: publishing 3-5 papers, applying for 1-3 technology patents and training 5-8 master student and 1-3 PhD candidates.