功率半导体器件新型MIS耐压层等势场调制基础理论与新结构

功率半导体器件的核心是耐压层，传统耐压层历经40年，日趋成熟，亟待新一代耐压层问世。本项目发明容型（MIS）新耐压层，建立等势场调制基础理论，提出新型介质终端技术和新一类MIS器件。含三创新点：.（1）首次提出MIS耐压层等势场调制基础理论，揭示等势场调制机理，导出关键参数普适定量设计式；.（2）首次提出等势场调制新型介质终端技术，降低曲率效应，实现600V耐压下，终端区耐压距离较漂移区长度缩短10μm；.（3）发明新型MIS耐压层新结构并实验研制，初步证明其比导通电阻Ron,sp显著优于报道最优结型器件,同等耐压下降低45.7%，特性领先。.本项目系功率半导体应用基础研究，国际尚未报道，在科学性与技术性上均意义重大。

The voltage sustaining layer (VSL) is the core of the power semiconductor devices. The conventional VSL is becoming more and more mature after 40 year’s development. The coming out of new-type VSL is urgently needed. This project invents a capacitance-type (MIS-type) VSL and develops its basic theory of equal-potential field modulation. Based on the basic theory, the new-type dielectric termination technology and new generation MIS-VSL devices are proposed. There are three innovation points in this study:.（1） For the first time, the basic theory of the equal-potential field modulation of the MIS-VSL is developed to reveal the essence of the equal-potential field modulation mechanism. The universal quantitative design formulas of the key parameters are deduced for the MIS-type devices. .（2） The new-type dielectric termination technology is firstly proposed based on the equal-potential field modulation to reduce the curvature effect in the termination region. The voltage sustaining length of the termination region is 10 μm shorter than the drift length for the 600 V level device. .（3）The new structures of the MIS-VSL device are proposed and experimentally realized, which obtain a leading specific on-resistance Ron,sp remarkably reduced by 45.7% when compared with the best reported Ron,sp of the junction-type VSL device under the similar breakdown voltage. .This project belongs to the applied basic research of power semiconductor devices, which has not been reported yet. It is of great importance in both the scientificity and technicality.