迄今国际上纳米硅高临界场Ec雪崩击穿机理尚待深究，更无定论。本项目提出纳米硅高Ec碰撞电离能量弛豫模型，揭示纳米硅临界场Ec增强机理；获得普适Ec定量关系，证明65 nm硅可实现Ec为185.2 V/μm，远逾常规；提出高临界场高耐压SOI器件新结构并进行实验研制。含三创新点：（1）提出纳米硅碰撞电离能量弛豫模型，建立能量输运概念，在准静态条件下求解简化玻尔兹曼能量输运方程，通过引入能量弛豫因子，获得载流子能量分布，揭示纳米硅临界场增强机理；（2）首次获得纳米硅Ec定量关系，提出三步优化法对Ec理论解析式进行最小二乘法非线性拟合，实现统一临界场Ec定量关系，奠定纳米硅材料雪崩击穿理论基础，其方法普适于其他半导体材料；（3）提出900 V级高临界场高耐压SOI器件新结构，突破迄今报道薄层SOI器件耐压值，兼具更低比导通电阻。本研究系纳米硅材料基础物理学前沿研究，意义重大。

The avalanche breakdown mechanism of the nanometer silicon with high critical electric field Ec is not clear yet. The energy relaxation model of the impact ionization of the high Ec nanometer silicon is proposed, which reveals the enhancement mechanism of Ec in the nanometer silicon. The quantitative expression of Ec is obtained from the model. The much higher Ec is demonstrated being 185.2 V/μm for the 65nm silicon. The new SOI device structure is given with high Ec and high breakdown voltage VB and will be experimental realized. There are three innovation points in this study: (1) the energy relaxation model of the nanometer silicon is proposed. With the concept of the energy transport, the simplified Boltzmann energy transport equation is solved under the quasi-static condition. By using the energy relaxation factor, the energy distribution of the carrier is given to reveal the essence of the Ec enhancement; (2) the quantitative Ec expression is obtained for the first time. The three step optimization method is proposed to obtain the united analytical Ec with the nonlinear least squares curve fitting method, which is the basis of the avalanche breakdown theory for the nanometer silicon. The method is universal for other semiconductor materials; (3) the 900 V level new SOI device structure with high Ec and high VB is proposed, which breakthroughs the reported maximum VB up to now and has the lower specific on resistance. This study is of great importance as the frontier research of the basic material physics for the nanometer silicon.