伴随InN材料物理特性研究进展，特别是0.7eV左右窄直接带隙的发现，使InN材料非常适合制备光纤通信领域中无污染、高性能的近红外发光管和激光器，很可能为光纤通信的发展带来突破。然而一直以来我们未见到InN材料的近红外电注入发光报道，目前我们首次实现了InN材料位于1573nm处的近红外电注入发光，得到国际同行的认可，受邀在2012年氮化物半导体国际会议上做邀请报告。然而目前对于InN材料物理特性的研究仍然不够透彻，如何实现InN材料更稳定高效的近红外电致发光仍然没有得到很好的解决。为此，我们将开展InN材料载流子输运行为及电注入发光机理的研究，并创新地提出采用极化诱导效应提高载流子的注入效率，使其主要在InN中复合发光，从而获得温度特性稳定的高亮度近红外电注入发光。该项目的开展，为InN系材料发光器件在光纤通信领域中的应用打下良好基础，具有重要科学意义。

The development of research on InN, especially the discovery of narrow direct band gap around 0.7 eV, has made it an ideal material to fabricate pollution-free, high-performance near-infrared (NIR) light emitting diode(LED) and laser diode(LD). These devices may bring a breakthrough in the field of fibre communication. However, we have rarely seen literatures about the electroluminescence of InN. At present, we successfully realize the 1573nm near-infrared electroluminescence of InN for the first time and our work has been recognized by international counterparts. In 2012, we were invited by International Workshop on Nitride Semiconductors to do invited talks. However, the research on physical property of InN material is not incisive enough, and there are still many obstacles must be overcome if we want to achieve NIR near-band luminescence with high stability and high efficiency. Under such circumstance, we plan to do research on the behavior of carrier transportation and the mechanism of electroluminescence in InN. We come up with the idea innovatively of using polarization to improve the injection efficiency of carriers which makes the recombination luminescence mainly in InN material. And this will achieve high brightness NIR electroluminescence with steady temperature dependence. This project is of great scientific significance to lay a good foundation for the application in the field of fibre communication of InN material system.