外太空环境温差变化大、空间辐射强，对近红外发光器件的可靠性和寿命产生严重影响，因而采用温度特性优良、抗辐射特性强的InN及其合金制备应用于空间辐射环境的近红外发光器件具有巨大潜力。然而目前InN基近红外发光器件发光效率低、功率很小，制约了其在空间领域的应用研究。项目申请人在国际上首次报道InN薄膜室温下近红外电致发光基础上，发现其具有随工作温度升高发光强度增强的异常温度特性。本项目拟利用纳米线具有良好晶格完整性、更好的释放应力等独特优势，创新地采用带有极化效应的InxAl1-xN电子阻挡层和改进界面特性的一维InN/InyAl1-yN组分渐变核壳纳米线异质结结构，在提高InN纳米线载流子辐射复合效率和光提取效率同时，利用壳层结构对InN有源区的保护进一步提高器件抗辐射能力，开展InN纳米线缺陷形成、演化、湮灭机理及核壳纳米线异质结构的载流子调控规律研究，最终实现毫瓦量级的近红外电注入发光。

In the outer space environment, wide temperature variations and intense radiation have a serious impact on the reliability and lifetime of near infrared light-emitting devices. Therefore, the InN and its III-nitride alloys which has excellent temperature characteristics and strong radiation resistance offer great potential for highly efficient and stable near infrared light-emitting devices (LED) for space applications. However, the efficiency of near infrared (NIR) electroluminescence (EL) of InN LEDs is very low. The smaller power restricts its application in the outer space. Basing on the realization of the NIR EL of InN film for the first time at room temperature, we found that it has abnormal temperature characteristic that the luminous intensity increases with the increase of temperature. Because nanowire materials has higher lattice perfection and better release of stress, we attempt to adopt the InxAl1-xN electronic barrier layer with polarization effect and InN nanowires of improved interface characteristics coated the component graded InyAl1-yN shell layer to improve the radiative recombination efficiency and light extraction efficiency of InN devices, and then using the InyAl1-yNshell to protect InN active region in favor to improve the radiation resistance of the device. We will carry out the investigation of the formation mechanism and the evolution mechanism of defects, and further understanding the carriers’ regulating characteristics of core-shell nanowires heterostructure to realize the NIR EL of InN nanowires with output power of milliwatt magnitude.