项目拟针对解决微波毫米波射频异质结双极晶体管（ HBT）器件建模技术中线性模型、非线性模型和噪声模型相对独立而不能统一表征器件特性的问题，提出将传统等效电路建模技术、物理器件建模技术和微波射频测量技术相结合的建模技术，该项目研究属于微电子和微波射频技术的交叉研究领域，在保留单独电路建模技术和物理器件建模技术优势的基础上，建立具有反映器件物理模型、仿真速度快、精度高的能够全面反映器件小信号、大信号和噪声特性的HBT等效电路模型。在研究67-110GHz射频特性测试技术的基础上，提供自主知识产权可以直接控制测试仪器的参数提取软件。结合和利用HBT毫米波元器件模型的研究与开发成果，研究面向5G无线通信频段低功耗低噪声放大器集成单元电路的设计技术。

III-V compound heterojunction bipolar transistors (GaAs HBTs and InP HBTs) largely retain the advantages of their Si predecessors, but extend them to higher frequencies. In this project, the fabrication, characterization and reliability methods for advanced III-V compound semiconductors will be investigated. The main research contents are the process fabrication techniques, microwave and RF measurement techniques, physical-based characterization and unique model parameter extraction methods based on 67-110GHz measurements. The targets are the small signal, large signal, noise and failure mechanism modeling and measurement for GaAs/InP HBTs. The model is versatile in that it permits dc, small signal, noise and large signal to be performed. Based on conventional equivalent circuit modeling, physical modeling technique and accurate microwave measurement technique, a direct extraction method to determine the extrinsic and intrinsic model parameters, also noise model parameters for HBT by using a set of closed-form expressions will be proposed. The other fundamental research will be focused on the low-power consumption low noise and power amplifiers design based on the accurate noise and nonlinear HBT models.