项目针对航天应用中温度循环载荷下，系统级封装器件（System In a Package-SiP）中硅通孔（Through Silicon Via-TSV）之间电击穿（Time Dependent Dielectric Breakdown-TDDB）引起的可靠性问题，采用实验、理论分析和数值模拟方法，研究SiP中TSV界面的微观-宏观力学行为与SiP器件TDDB寿命间的关系，建立其分析模型。主要研究内容为：实验研究温度循环过程中TSV界面应力梯度分布、微观结构、TSV间漏电量的演化规律，建立温度循环次数与TSV界面微观结构演化、应力梯度、TSV间漏电量之间的关系；发展一种可以描述TSV界面微结构特点和力学行为的微观力学模型和宏观计算模型；提出TSV界面失效评价指标和方法，建立考虑TSV界面影响的SiP器件TDDB寿命预测模型。研究目标为：给出TSV界面在主要服役条件下力学行为的清晰图像。

SiP devices for aerospace applications are operated under severe working conditions and harsh environments. Therefore, the reliability and lifetime of such devices is of great importance. The relationship between the micro-mechanical behavior of TSV interface and the TDDB lifetime of SiP devices is investigated in this project by experimental, theoretical and numerical methods. In the project, the evolution of the microstructure of the TSV interface under thermal cycling test is monitored experimentally, and the relationship among cycle times, the microstructure of the TSV interface, the stress gradient in TSV interface and the current leakage between TSVs is investigated. Based on the experimental observations, a qualitative model including micro- and macro-mechanisms responsible for electro-thermal ageing of the TSV interface is proposed. Failure analysis of TSV interface is carried out, and a model considering the effect of TSV interface damage for TDDB lifetime prediction of SiP device is proposed. The models and methods derived finally are applied to analyze mechanical reliability of SiP devices. The objectives of this project are to provide a clear picture of the micro- and macro-mechanical behaviors of the TSV interface, to provide models and tools for TDDB reliability design of SiP devices.