电化学沉积铜连线技术是芯片高端电子制造中的核心技术之一。在硅基工艺的芯片制造中，盲孔用于表层与其下层的连接；通孔用于多层间的连接。赶超和发展我国芯片制造水平具有重要的科学和实际意义。本项目针对我国在盲孔/通孔铜连线电沉积的关键技术，以原位红外光谱、拉曼光谱结合电化学方法深入研究添加剂的吸附行为、电还原产物、分子作用(抑制、加速、整平等)机制及影响规律，为发展电沉积铜新型添加剂提供理论指导。采用原位透射电镜、原位X射线分析等技术，研究铜沉积初期的成核与生长表界面过程、揭示铜连线电沉积过程实质，为致密铜连线填充提供理论和实验依据。基于申请人前期研发的腐蚀性小、中性-弱碱性一价、二价电沉积铜新技术，研究盲孔/通孔铜连线电沉积填充过程和添加剂分子作用机制、揭示铜成核与生长表界面过程。项目在发展具有自主知识产权的盲孔/通孔铜连线填充新技术方面具有鲜明的特色和创新性。

Electrochemical deposition copper interconnect is one of the key techniques in chip high-end electronic manufacturing. In the silicon chip manufacturing the blind hole is for the connecting with surface layer to its inner layer and the through via for the multilayer interconnecting. To overtake and develop the chip manufacturing level in China is very important in science and practice. Aiming at the key techniques on copper electrochemical deposition for interconnect in blind hole/through via in China, the project studies the adsorption behavior, electrochemical reduction products of the additives, molecule action mechanism and influence of additives (suppression, acceleration, and leveling) by in-situ infrared spectroscopy, in-situ Raman spectroscopy combined with electrochemical methods, which can provide an theoretical guidance for the development of novel additives in copper electrochemical deposition. The project investigates the nucleation and growth in the early stage of copper electro-crystallization, reveals the essence of copper filling in blind hole and through via by in-situ transmission electron microscopy (TEM) observation and in-situ X-ray diffraction analysis, which can provide experimental techniques and theoretical guidance for the compact copper filling in via. The project explores the copper electrochemical filling in blind hole and through via, molecule action mechanism of additives and the copper nucleation and growth in surface/interface based on the previous developed processes of monovalent and divalent copper electrochemical deposition processes by the applicants, which are in lower corrosive at neutral-weakly alkaline. The project shows the evident characteristics and innovation for the developing the novel copper interconnecting techniques in blind hole/through via with independent intellectual property.