二维拓扑绝缘体由于具有量子自旋霍尔效应而受到学术界广泛关注。一些单层过渡金属硫族化和物具有二维拓扑绝缘体性质，如ZrTe5, 1T'-MoS2, 1T'-WS2等等，在量子自旋霍尔效应方面具有潜在的重要研究价值。生长高质量的单层以及厚度精确可控的高质量过渡金属硫族化物拓扑绝缘体薄膜会推动这一方向的进一步发展。.在本项目中，我们将利用分子束外延方法，在超高真空中生长单层或厚度可控的过渡金属硫族化物拓扑绝缘体薄膜，并利用扫描隧道显微镜表征薄膜的电子结构与厚度的关系。通过掺杂以及剪裁界面工程和量子尺寸效应实现带隙结构及拓扑边界态的调控；并研究磁性掺杂对表面态的作用；以及生长基于拓扑绝缘体薄膜的理想界面体系，用于研究界面量子现象。

Two dimensional topological insulator, due to hosting quantum spin Hall Effect, has been attracting great attentions. It has been predicted that some of the single layer transition metal chalcogenide, such as ZrTe5, 1T'-MoS2, 1T'-WS2 etc., are ideal 2D TI materials, and find potential in applications based on quantum spin hall effect. No doubt, growth high quality single layer transition metal chalcogenide, and therefore thickness controllable 2D TI thin films, will facilitate both fundamental research and device applications. We also propose to tailor the electronic band structure and topological edge states via doping, interface engineering, and quantum size effects etc. We also try to grow transition metal chalcogenide thin films based interface and study the exotic physical phenomena at interface.