复杂的空间辐射环境中存在大量宇宙射线，使集成电路中半导体器件特性及可靠性恶化，是影响航天器在轨稳定运行的主要原因。SOI MOS器件由于含有多个硅-二氧化硅界面，总剂量效应对其影响较为严重。我们不仅要了解总剂量效应使器件特性发生怎样的变化，更需要深入影响机理，研究器件中的多个硅-二氧化硅界面如何变化。.本研究基于DCIV界面态表征技术，对SOI MOS器件的多个硅-二氧化硅界面的界面态浓度及分布情况进行表征分析，并研究辐照、退火及电学应力等条件对多种界面态的影响，在此基础上结合仿真技术，研究多种精细结构器件的界面态，期望得到SOI MOS器件的界面态建立与衍变机理，从而提出对SOI MOS器件的多个硅-二氧化硅界面有效的调控方法。本课题希望能从界面调控的角度出发，在结构设计和工艺加工层面提出有效提高SOI MOS器件抗辐照特性和可靠性的加固方法，促进国内SOI技术在宇航芯片中的广泛应用。

The existence of cosmic radiation in complicated space environment could induce the performance of the device and circuit degradation, even drastically failure. Total ionizing dose effect is one of the important radiation effects on SOI MOSFET devices due to the multi-interface of Si/SiO2. The improvement of radiation characters and reliability of SOI MOSFET devices has significant importance on the application of SOI devices and circuits in complicated space environment. Meanwhile, the research on Si/SiO2 interface regulation mechanism has great science significance. .The DCIV interface state measurement method is applied to analyze the front- and back- gate interface traps in this project. It is indicated that radiation, annealing and electrical stress affect the situation of interface state, including its density and distribution etc. In addition, different interface states of SOI devices with multi-structures were studied by DCIV interface state measurement to obtain the mechanism of generation and effect of interface traps. It is expected that the effective interface control methods could propose novel means to improve radiation characters and reliability of SOI MOSFET devices, resulting more application of SOI technology to aerospace chips.