III-V族化合物半导体多结太阳电池是目前航天设备使用的唯一光伏器件，其抗宇宙高能粒子辐射性能的优劣严重影响其搭载的航天设备的工作寿命。本项目将瞄准“提升抗辐射性能”需求背后的两个科学问题:“新型抗辐射多结电池的基础设计理论”和“新型抗辐射量子点多结电池的器件行为与机理探索”开展研究，具体划分为三个子课题：1）建立陷光型超薄多结电池的光吸收和器件行为的物理模型，并提出陷光型倒装InGaP/GaAs/InGaAs三结及量子点InGaP/GaAs/InGaAs三结电池的最佳抗辐射设计方案；2）分析化学腐蚀法获得的“陷光表面”的非理想因素，完善陷光型抗辐射多结器件的物理模型；3）针对新型抗辐射三结电池(包含量子点样品)，采用绝对电致发光测试法获得子电池的I-V特性等内部电性参数，结合材料表征结果探明器件行为机理和电性退化机理。本研究可为国内企业和科研机构在航天用多结电池芯片的研发中提供强有力的理论支撑。

III-V compound semiconductor multi-junction (MJ) solar cell is the only present photovoltaic device using in space application, whose core unit is a multilayer hetero-epitaxial high-end chip. Significantly, the space irradiation tolerances of such MJ solar cells play a key role in the lifetime of space equipment that carries them. This proposal will focus on the two scientific issues behind the main requirement of “high conversion efficiency and strong irradiation resistance”: “the physical modeling and basic design theory on a new type light-trapping ultra-thin MJ solar cell” and “the device mechanism for a new type irradiation preventing quantum dot (QD) MJ solar cells ”. The primary study is divided by three sub-projects: 1) modeling the optical absorption and device behavior for the light-trapping ultra-thin MJ cell with a rear-textured surface, and establishing the design theory for anti-irradiation structure. With such theory proposing the optimal structure design for a light-trapping anti-irradiation InGaP/GaAs/InGaAs IMM triple-junction solar cell and quantum dot InGaP/GaAs/InGaAs triple-junction solar cell; 2) analyzing the non-ideal factors of the "light-trapping surface" obtained by chemical etching, and deeply discussing its influence on device design and device behavior in order to refine the proposed light-trapping model; 3) For the samples of irradiation preventing QD three-junction cell, whose internal subcell I-V characteristics will be diagnosed by absolute electroluminescence test, the behavior mechanism and electrical degradation mechanism of such devices are explored in combination with subcell's material characterization. This research would provide a strong theoretical reference and technical reserve for domestic enterprises and research institutions who have been devoting to III-V multi-junction solar cell chips for aerospace applications.