基于自下而上方法的碳化硅晶圆减薄工艺中微结构形性控制与参数优化研究

基于碳化硅晶圆制备的微电子芯片，在高频、高压应用领域具备独特优势。减薄工艺是提升碳化硅微电子芯片性能的关键技术；碳化硅晶体的结构多样性和硬脆性对传统基于硅的减薄工艺提出新的挑战。本项目以碳化硅晶圆减薄工艺中微结构与特性演变为研究对象，基于自下而上的建模方法与材料本征特性，从原子分子电子到连续体材料尺度建模分析碳化硅晶圆微结构演变机制；建立反映碳化硅特性的势函数，构建实现微尺度模型与宏观连续模型双向信息传递的原子-连续模型，建立减薄过程中碳化硅晶圆晶体微结构重构与物理特性重建模型，揭示减薄过程中物理、化学效应作用下的晶圆微结构重构与特性重建的关联机制，实现减薄工艺中碳化硅晶圆微结构的形性控制，建立以晶圆晶体形态一致性与物理特性稳定性为目标的减薄工艺参数优化路径，实现碳化硅晶圆减薄工艺一致性与高效性。

Microelectronic chip based on silicon carbide(SiC) has unique predominance at the microelectronic chip field with the requirement of high frequency and high voltage. Wafer thinning is a critical technology which can improve the performance of SiC chip. Due to the hardness and brittleness of SiC crystal of the structure diversity, the conventional wafer thinning based on silicon has difficult in thinning SiC wafer and faces some problems. This project focuses on the evolution of microstructure and characteristic of SiC wafer during wafer thinning. Using the bottom-up method of modeling based on the intrinsic characteristics of SiC, microstructure of SiC wafer can be simulated and analyzed from the scale of the atoms, electrons, and molecules to the continuum scale of body materials. The potential functions shall be developed to reflect the physical properties of SiC，and the atomistic-to-continuum model shall be constructed which can reciprocally transfer information from the atomistic to the continuum. The models concerning microstructure reconstruction and physical properties evolution of SiC wafer shall be built. The correlative mechanism between microstructure reconstruction and physical properties evolution under the coupling physical-chemical effect will be apprehend during the SiC wafer thinning. And the microstructure and property control of silicon-carbide wafer shall be conducted during the wafer thinning process. Furthermore, the means of parameter optimization for configuration coherence and physical property stability shall be developed during SiC wafer thinning, the thinning technology of SiC will be the consistency and high efficiency.