对于20nm/14nm技术以下的含硅通孔(TSV)结构晶圆减薄工艺来说，实现缺陷可控、结构稳定的高效晶圆减薄是关键。认识减薄过程中表面/界面微结构的演变机制,才能优化减薄工艺，实现减薄过程表面/界面微结构稳定与缺陷可控。本项目围绕含硅通孔结构晶圆减薄过程中多物理场作用下的异质材料（硅、二氧化硅、铜等）表面/界面微结构演变，建立耦合多物理场的晶圆表面/界面微结构的跨尺度演变模型；自下而上（Bottom-Up）跨尺度分析晶圆减薄过程中异质材料表面/界面结构演变；通过晶圆减薄工艺实验与微观检测，分析减薄过程中异质材料界面/表面微结构演变机理，建立晶圆减薄过程中表面/界面缺陷的产生、引入、扩展模式，揭示晶圆减薄过程中表面/界面损伤的工艺参数诱导规律；提出含硅通孔晶圆减薄工艺的优化方法，实现缺陷可控、结构稳定、高效率、低应力的晶圆减薄。

For the processing of wafer thinning with through silicon vias(TSV) in the microelectronic technology of 20nm/14nm, controlling defect and maintaining microstructure stability of surface and interface of wafer is very crucial. Only understanding the microstructure evolvement of surface and interface, controlling defect and maintaining microstructure stability in wafer thinning is achieved, and optimizing the processing of wafer thinning with TSV. In this proposal of the project, the microstructure evolvement mechanism of surface and interface of different materials( Si,SiO2, Copper) under multi-physical loads will be key point investigated in the processing of wafer thinning with TSV. The trans-scale microstructure evolution model of surface and interface coupling multi-physical fields will be built for wafer thinning, and the deformation of surface and interface of different materials in wafer thinning with TSV will be analyzed with the Bottom-up method from atom to continuum, the deformation mode of surface and interface will be understood. By the processing experiments for wafer thinning with TSV and microstructure analysis, the evolvement mechanism of surface and interface will be completely realized, and the mode of origin, importing, and expanding of defect in surface and interface will be acquainted; and so, the figuration and spreading mechanism of surface and interface demage of different materials in wafer thinning can be built. The optimization method of processing preferences can be acquired, wafer thinning with TSV of high performance, controlling defect, stability, and low stress will be implement in this proposal of the project.