新型非对称复合透明电极MgZnO日盲紫外光探测器工作机理与实验研究

针对叉指电极结构MSM探测器光电响应度低、量子效率不高的固有缺陷，结合非对称电极对于探测器暗电流特性的改善作用，申请者提出了基于非对称MgO/Metal(Au、Pt)/MgO复合透明电极的MgZnO日盲紫外探测器结构。拟从理论和实验两个方面对其展开研究。具体包括基于薄膜光学理论建立多层膜理论模型，获取紫外复合透明电极参数，在此基础上，通过引入多种物理机制的影响完善申请者前期建立的器件数值模型并进行探测机理研究和器件结构优化；通过基于ZnO缓冲层的六方相MgZnO外延材料生长、肖特基非对称复合透明电极制备、二氧化硅钝化层/减反射层PECVD沉积等探索稳定、可靠的工艺方案并进行器件实验；进而建立半物理半经验/经验等效电路模型进行电路级仿真。上述研究旨在探索新电极结构探测器工作的内部机理，揭示复合透明电极对日盲探测性能的影响机制，为MgZnO高性能日盲紫外探测器的设计与制备提供理论和实验参考。

Considering the limitation of both optical responsivity and quantum efficiency by the inherent defect of shadow effect for normal incidence of traditional metal-semiconductor-metal (MSM) photodetectors, a novel MgZnO solar- blind MSM ultraviolet detector with MgO/Metal(Au、Pt)/MgO transparent electrodes which have asymmetric structures to suppress the dark currents is proposed. The theoretical analyses and experiments will be carried out in this study. Based on the optical thin-film theory, a theoretical model of multilayer films will be established to get the parameters of the UV transparent electrodes. On the basis, the pre-established numerical model of ours will be further improved by considering a variety of physical mechanisms. Then, the detection mechanism will be investigated and the device structure will be optimized. To obtain stable and reliable manufacturing processes,some important fabrication processes such as the growth of MgZnO with ZnO buffer layer, the preparation technology of Schottky transparent electrodes with asymmetric structure and the PECVD deposition of the SiO2 passivation /antireflection layer will be studied in detail. For the circuit level simulation of novel photodetectors, semi-analytical model and equivalent-circuit-based model will be set up after device fabrication and testing. The purpose of this study is to explore the internal working mechanism of the detector with novel electrode structure and reveal the impact of asymmetric MgO/Metal(Au、Pt)/MgO transparent electrodes on the solar-blind detection, providing the theoretical and experimental references for the design and preparation of high-performance solar-blind UV photodetector.