Bandwidth enhancement of MgZnO-based MSM photodetectors by inductive gain peaking
Bandwidth enhancement of MgZnO-based MSM photodetectors by inductive gain peaking
复制标题
通过感应增益峰值增强 MgZnO 基 MSM 光电探测器的带宽
DOI:
10.1063/1.4961217
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发表时间:
2016-08
影响因子:
3.2
通讯作者:
Zhiyong Zhang
中科院分区:
文献类型:
--
作者:
Ping Wang;Xinlu Guo;Lixin Guo;Jingfang He;Yintang Yang;Zhiyong Zhang
For high-speed optical communication applications, the bandwidth of photodetector would be a key limitation. In this work, the bandwidth property of MgZnO-based Metal-Semiconductor-Metal (MSM) photodetector considering RC and transit limitations is investigated on the basis of the series and enhanced gain peaked photodetector circuits proposed by us with different finger widths. To ensure the accuracy of parameters, the high-filed transportation characteristics of MgZnO are investigated by a three-valley ensemble Monte Carlo simulation combined with first principle calculations. The results show that the gain peaking technique, especially the enhanced gain peaking, can improve the bandwidth of MgZnO MSM photodetector to a maximum value of 61.28 GHz, corresponding to a bandwidth enhancement of 49% without undesired effects. Three-dimensional electromagnetic computation is further performed to design and simulate the on-chip-inductor. The value of the simulated inductor is approximately 0.0529 nH, which is ...
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影响因子:
2.6
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通讯作者:
Jyun-Yi Li;Sheng-Po Chang;H. Lin;S. Chang
影响因子:
2.6
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影响因子:
2.6
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C. Tseng;Ku-Hung Chen;Wei-ting Chen;Ming-Chang M. Lee;N. Na
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3
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通讯作者:
J. Kim;M. Kim;S. Kim;W. Hwang;D. Miller;M. B. Das;J. Rios;L. Lunardi
影响因子:
1.7
作者:
Shang Gao;Jieming Qin;Qingcheng Liang;Jianxun Zhao
通讯作者:
Jianxun Zhao