这个项目提出了用半解析方法和边界层方法，对45-14nm的MOSFET电学特性分析模型和电路模拟器的器件电学特性模型统一建模。项目将利用申请人已有的工作基础，借鉴流体力学边界层理论的成功经验，给出MOST的二维电势和准二维电流的半解析解，表面势的闭合半解析解，亚阈值区电势与电流/电容半解析表达式,高精度的无适配参数的阈值电压半解析表达式，高k栅电学特性的半解析模型；SOI MOSFET亚阈值区的伏安特性二维半解析解。这些半解析模型可用作MOS器件电学特性分析和电路模拟器的器件模型，提供了高精度、高计算效率、有明确的物理意义和预见性的显表达式，为预测45-14nm 高k栅结构MOSFET的电学特性提供了一条可能的途径。

This project has suggested a study of unified modeling for analysis models of electrical characteristics and device models of circuit simulator on MOSFETs of 45 nm-14nm by the semi-analytical method and boundary layer method. Based on the existing working and the successful experience of boundary layer fluid mechanics theory, the project will give the semi-analytical solutions of the 2-D potential and the quasi 2-D current, the closed semi-analytical solutions of surface potential, the semi-analytical expressions of voltage and current/capacitance in a subthreshold state, the semi-analytical expressions of the threshold voltage with a high precision and no adaption factors, a semi-analytical model of electrical characteristics with high k gate dielectric, the semi-analytical solutions of volt-ampere characteristics for SOI MOSFETs in a subthreshold state. These semi-analytical models can be used in the electrical characteristics analysis of MOSFETs and the circuit simulator devices. Explicit expressions with a high precision, a high calculation efficiency, a clear physical significance and predictive are also be provided. Then it provides a possible way to predict the electrical characteristics on MOSFETs of 45nm-14 nm