原子级厚度氮化硼大面积、高质量的生长与调控

原子级厚度的氮化硼白石墨烯是与石墨烯具有类似结构的二维晶体材料，具有优异的物理和化学性能，在微纳光电子器件领域具有巨大的应用潜力。如何实现白石墨烯的大面积、高结晶质量的可控生长是其在器件应用的关键基础问题。本项目以白石墨烯为研究对象，以大面积、高质量白石墨烯的可控制备为研究目标，基于减少BN的形核位点，降低BN的形核密度的策略，在化学气相沉积法生长中辅以衬底表面电化学抛光处理，氧化预处理及氢气刻蚀等手段实现大面积、高质量、单晶畴的白石墨烯生长。研究化学气相沉积工艺条件和金属衬底的表面结构状态与白石墨烯的微观结构、层数之间的相关性，揭示化学气相沉积过程中白石墨烯的形核生长机制以及金属衬底对白石墨烯的催化生长机制，实现大面积单晶畴的白石墨烯的可控生长。本项目可望获得大面积、高质量、层数可控的白石墨烯，为制备基于白石墨烯的微纳光电子器件提供理论依据和应用研究基础。

Two-dimensional boron nitride, as a graphene analogue, has attracted increasing interest because of its unique structure, many fascinating properties and a wide range of technological application, especially in optical-electrical devices. Large-scale and high-quality BN is the base of the application in devices. We select the large-scale and high-quality BN as the research goal and utilize chemical vapour deposition and the catalyse of metals to synthesize BN. With the strategy of reducing the nucleation density of BN, the treatment of substrate by electro-polish and oxidation, the etching of BN by H2 are used to achieve the growth of large-scale and high-quality BN. The main contents will conclude the following parts: to study the effect of the growth condition of CVD on the microstructure and the thickness of BN; to study the nucleation and growth mechanism of the large area and high crystalline BN with atomic scale thickness. Large-scale and high-quality of the white graphene will be achieved. These works will build a solid base for the optoelectronics and applications of two-dimensional semiconductors.