针对SiC晶片研磨过程中存在的加工效率低、损伤大、面形精度控制难的技术问题，本项目提出采用超声振动辅助行星磨削方法对线切后的SiC晶片进行精密磨削加工。通过自行设计和制备大尺寸径向超声振动磨盘（直径为700mm），在精密行星磨床上对SiC晶片开展超声辅助行星磨削实验研究，分析碳化硅晶片超声辅助行星磨削过程中磨粒与工件的作用机制，揭示其材料去除机理及加工损伤形成机制，建立SiC晶片超声振动辅助行星磨削加工损伤预测模型。并通过理论计算，分析超声辅助行星磨削过程中磨粒与工件的相对运动轨迹，建立SiC晶片行星磨削材料去除率模型及晶片面形精度控制模型。并以提高加工精度、减小损伤深度和提高加工效率为目标，制定SiC晶片超声振动辅助行星磨削加工优化策略，探索一套适用于晶片超声辅助行星磨削加工的新工艺。

A new machining method of ultrasonic vibration assisted planetary grinding is proposed for some difficult technical problems of a low production rate, a serious damage, and difficult controlling of wafer shape precision in silicon carbide wafer double sides lapping. A new ultrasonic vibration assisted grinding wheel will be designed and fabricated, which will be used to grinding silicon carbide wafers after cutting with diamond wire on precision double-sided planetary grinding machine in ultrasonic vibration assisted planetary grinding. The material removal mechanism and damage formation mechanism will be revealed by analysis of interacting mechanism of grain and workpiece in ultrasonic assisted planetary grinding silicon carbide wafer. A damage prediction model will be established for ultrasonic assisted planetary grinding silicon carbide wafer. The material removal rate model and shape precision controlling model will be established by calculating and analyzing the relative trajectories of grain and workpiece in ultrasonic assisted planetary grinding silicon carbide wafer. A machining optimization strategy will be set to reduce the depth of the damage, improve machining precision and processing efficiency. A set of suitable new technology of ultrasonic vibration assisted planetary grinding silicon carbide wafer will be explored.