忆阻器及其忆阻混沌电路研究是近年来的一个研究热点，本项目针对忆阻器以及忆阻混沌电路的技术瓶颈和发展趋势，重点围绕SBT忆阻器实物元件的建模及其在混沌电路中的应用展开研究。首先，根据SBT忆阻器的工作机理，通过改变SBT纳米薄膜的晶格结构，拓宽SBT忆阻器“8”字型I-V特性曲线包裹区域，研制能够满足从低频到高频电信号下混沌电路需求的忆阻器实物元件；然后，基于SBT忆阻器的实测I-V特性，建立SBT忆阻器实物元件的“荷控模型”和“磁控模型”，在统一框架下实现SBT忆阻器实物元件的两种模型之间的转换；最后，将SBT忆阻器作为基本电路元件直接应用到混沌电路中，研究基于SBT忆阻器实物元件的新型混沌电路系统的基本特点，以期形成一系列原创性成果。本项目是一项具有前沿性、基础性和实用性的研究课题。它的完成，不仅能够丰富相关的理论及研究手段，而且可为实物忆阻器在混沌电路中的应用提供重要的理论依据。

The memristor and memristive chaotic circuit became a research hotspot in recent years. To solve the technical bottlenecks of the memristor and memristive chaotic circuit, this project studies the modeling of SBT physical memristor components and its application on chaotic circuit. Firstly, according to working mechanism of SBT memristor, the lattice structure of SBT nanometer film is changed and the "8" I-V curve parcel area of the SBT memristor is broadened, in order to develop the memristor which can meet the requirement of chaotic circuit from low frequency to high frequency electric signals. Then, according to the measured I-V curve of the SBT memristor, the charge-controlled model and flux-controlled model of SBT physical memristor components are built, under the unified framework, the conversion between the two models of SBT physical memristor components can be realized. Finally, the SBT memristor as the basic circuit component is directly applied to the chaotic circuit. The basic characteristics of the new chaotic circuit system based on SBT physical memristor components is researched, in order to explore a series of original results. The project is frontier, fundamental and practical. The completion of the project can not only enrich the related theory and research method, but also provide important theoretical basis for the application of physical memristor components on chaotic circuit.