高亮度硅量子点发光二极管（LED）是实现硅光电子集成的关键；而高效的硅量子点薄膜太阳电池，鉴于其适用性，也是近年来光伏领域孜孜以求的目标。二者主体结构相似，能量转化方向相反，当前面临的共同瓶颈问题是如何实现电荷（载流子）在量子点间的有效隧穿迁移。目前通用的方法是对硅材料做化学钝化和场效应钝化及结构处理，但这些均无法根本解决电荷有效隧穿问题。为此，本项目通过研制密堆积硅量子点薄膜功能材料，来大幅减小电荷隧穿的势垒宽度，同时增加硅量子点空间密度。将首先利用氧化-腐蚀方法量产高纯度的、分立的硅量子点，再经过系列后处理方法，制备密堆积硅量子点薄膜材料。之后研究该材料的结构优化，以获取结构良好的密堆积硅量子点薄膜。该材料也是一种新型人工晶体。在此基础上，将开展这种硅材料的发光和光伏特性及其它物性研究，以及高亮度、三原色硅量子点LED和稳定、高效的硅量子点薄膜太阳电池的应用研究。

High-brightness Si quantum dot light-emitting diodes (Si QD LEDs) are indespensible for the integrated Si photonics. On the other hand, high efficiency Si QD thin film solar cells are highly pursued in the photovoltaic field recently for its excellent serviceability. The basic geometries for both devices are similar, only the power conversion directons are reverse. A common bottleneck problem for both is how to facilitate carrier transport within Si QD thin film. Normal treatments are chemical and field-effect passivations as well as structural modification. However, none of them can solve the bottleneck problem. In this proposal, we conceive to prepare a noval functional material-closely pack Si QD thin film, so as to drastically reduce the barrier widths among the QDs and meanwhile to increase the Si QD density for enhanced light-emission or photoabsorption. Firstly, by using an approach of oxidation and etching, a large amount of Si QDs with high purity are prepared. A series of post-treatments yield Si QD thin films in an embryonic form. Further, via optimizing the preparation procedure, Si QD thin films with much improved close packed structures are obtained. Such a thin film is in fact a noval man-made crystal material. The light emitting and photovoltaic properties as well as other propeties of such Si QD thin films are investigated. Based on the Si QD thin films, high brightness and three primary color Si QD LEDs as well as Si QD thin film solar cells with high efficiency and long-term stability are studied.