基于X射线诱发激进粒子反应机制的短波增反膜表面碳沉积原位、高效、无损清洗方法的研究

集成电路制造水平决定着一个国家科技和产业能力的高度，也是目前我国众多“卡脖子”问题的症结所在。EUV光刻机是现阶段制造集成电路的最高端设备。为了缩短与发达国家的差距，我国也在积极开展EUV光刻技术的研究，其中一个关键问题一直阻扰着我国EUV光刻技术的发展，即碳沉积问题，其后果将导致EUV光刻系统瘫痪。为了解决此问题，本项目将目光集中在实用化碳沉积清洗技术的基础科学问题研究上，指出利用EUV光子的光电离作用诱发工作气体产生激进粒子实现碳沉积的及时原位去除策略是一种极具应用潜力的方法，并希望将其应用到其他X射线领域，如同步辐射光束线。重点研究高能光子诱发激进粒子的时间和空间特性，能谱范围对激进粒子产量的影响，激进粒子与碳沉积的反应机理及实验方法，膜层表面形貌与性质的变化，以及碳层厚度与反射率变化的高精度探测手段。该项目的顺利实施将对我国EUV光刻技术的发展以及X射线相关技术的进步具有重要意义。

The level of integrated circuit manufacturing determines the height of a country's technological and industrial capabilities, and it is also the crux of many "card neck" problems in China. The EUV lithography machine is the highest-end device for manufacturing integrated circuits at this stage. In order to shorten the gap with developed countries, China is also actively conducting research on EUV lithography. One of the key issues has been hindering the development of EUV lithography in China, namely the carbon deposition problem, and its direct consequences will cause the EUV lithography system to fail. In order to solve this problem, the project focuses on the research of basic scientific issues of practical cleaning technology for carbon deposition, pointing out that the timely in-situ removal strategy of carbon deposition by using the photo-ionization effect of EUV photons to induce the working gas to generate radical particles is a potential application method, and hope to apply it to other X-ray fields, such as synchrotron radiation beam lines. The project focuses on the temporal and spatial characteristics of high-energy photon-induced radicals, the influence of energy spectrum on the production of radical particles, the reaction mechanism and experimental methods of radical particles and carbon deposition, the changes in the surface morphology and properties of the film, and the high-precision detection means for thickness of the carbon layer and the changes in reflectivity. The smooth implementation of this project will be of great significance to the development of EUV lithography technology and the progress of X-ray related technology in China.