基于等离激元诱导电荷分离(PICS)效应的高密度光电耦合信息存储材料研究

批准号:
U19A2091
项目类别:
联合基金项目
资助金额:
250.0 万元
负责人:
徐海阳
依托单位:
学科分类:
无机非金属半导体与信息功能材料
结题年份:
2023
批准年份:
2019
项目状态:
已结题
项目参与者:
徐海阳
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中文摘要
光电耦合忆阻器集图像探测、存储、处理功能于一体,是构筑新型图形处理器(GPU)的一种重要备选方案。本项目针对目前光电忆阻器光波长响应单一、难以实现三维图像探测/存储的困难,提出基于“等离激元诱导电荷分离(PICS)”效应,构筑可多波长响应、兼具忆阻功能与三维全息光存储功能的信息存储材料与器件。设计并制备金属纳米颗粒@氧化物(nano-M@MOx)复合材料,实现其微结构和光电特性的调控;揭示复合材料中“光子—等离激元—离子—电子”的耦合机制,研究“光致离子化”过程对光存储性能和忆阻行为的影响;通过调控等离激元的光谱特性和nano-M@MOx薄膜的微结构特性,重点解决光电忆阻器的光波长分辨能力和使役稳定性等关键科学问题。构筑光电忆阻器crossbar阵列,实现对全息光学“条纹”的存储;探索利用忆阻器模式识别改善图像识别效率和精度的方法,拓展光电忆阻器在光电逻辑运算、光电神经突触方面的应用。
英文摘要
Optoelectronic memristor, which integrates image acquisition, storage and processing functions, is one of the important candidates to build future graphics processing unit (GPU). However, at this stage, there are the problem of single-wavelength response and the difficulty of three-dimensional (3D) image detection/storage in the optoelectronic memristors. Aiming at these shortages, this project proposes to develop some optoelectronic information storage materials based on the “plasmon-induced charge separation (PICS)” effect, thus realizing the combination of memristor-based storage and 3D holographic optical storage into the same material with multi-wavelength response. A series of metal-nanoparticles/metal-oxide composites (nano-M@MOx) will be designed and fabricated, and their microstructural and optoelectronic characteristics will be tailored. We will reveal the “photon-plasmon-ion-electron” coupling mechanism in the composite films, and study the influence of “photo-induced ionization” process on the optical storage properties and memristive behaviors. By controlling the spectral characteristics of plasma resonances and the microstructure of nano-M@MOx composite films, we will focus on resolving some key scientific problems, such as wavelength resolution and operational stability of optoelectronic memristors. We will attempt to record the holographic interference fringes in a crossbar array of optoelectronic memristor, and improve the speed and accuracy of image recognition by utilizing the pattern recognition function of the memristor array, and also extend the applications of optoelectronic memristors into the logical operation and artificial synapse.
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer
具有 AgInSbTe 缓冲层的非晶硅基忆阻器件实现了高开关均匀性和 50 fJ/bit 能耗
DOI:10.1063/5.0053470
发表时间:2021-07
期刊:Applied Physics Letters
影响因子:4
作者:Yanyun Ren;Xiaojing Fu;Zhi Yang;Ruoyao Sun;Ya Lin;Xiaoning Zhao;Zhongqiang Wang;Haiyang Xu;Yichun Liu
通讯作者:Yichun Liu
DOI:10.1002/smll.202207928
发表时间:2023-03
期刊:Small
影响因子:13.3
作者:Jiaqi Han;Xuanyu Shan;Ya Lin;Ye Tao;Xiaoning Zhao;Zhongqiang Wang;Haiyang Xu;Yichun Liu
通讯作者:Jiaqi Han;Xuanyu Shan;Ya Lin;Ye Tao;Xiaoning Zhao;Zhongqiang Wang;Haiyang Xu;Yichun Liu
Plasmonic Optoelectronic Memristor Enabling Fully Light‐Modulated Synaptic Plasticity for Neuromorphic Vision (Adv. Sci. 6/2022)
等离激元光电忆阻器实现完全光调制的神经形态视觉突触可塑性(Adv. Sci. 6/2022)
DOI:10.1002/advs.202270034
发表时间:2022-02
期刊:Advanced Science
影响因子:15.1
作者:Xuanyu Shan;Chenyi Zhao;Xinnong Wang;Zhongqiang Wang;Shencheng Fu;Ya Lin;Tao Zeng;Xiaoning Zhao;Haiyang Xu;Xintong Zhang;Yichun Liu
通讯作者:Yichun Liu
DOI:10.1039/d2tc01775j
发表时间:2022
期刊:Journal of Materials Chemistry C
影响因子:6.4
作者:Xu Fan;Zhang Cong;Zhao Xiaoli;Yu Hongyan;Zhao Guodong;Li Juntong;Wang Bin;Tong Yanhong;Tang Qingxin;Liu Yichun
通讯作者:Liu Yichun
Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse
通过单晶体管/单电阻忆阻突触实现巴甫洛夫调节
DOI:10.1063/5.0086867
发表时间:2022-03-28
期刊:APPLIED PHYSICS LETTERS
影响因子:4
作者:Cheng, Yankun;Lin, Ya;Liu, Yichun
通讯作者:Liu, Yichun
多孔非晶碳薄膜的忆阻效应及其超低功耗突触器件研究
- 批准号:51872043
- 项目类别:面上项目
- 资助金额:60.0万元
- 批准年份:2018
- 负责人:徐海阳
- 依托单位:
基于pn结空间电荷区宽度调制的忆阻器:材料、忆阻行为调控与神经突触仿生研究
- 批准号:51372035
- 项目类别:面上项目
- 资助金额:80.0万元
- 批准年份:2013
- 负责人:徐海阳
- 依托单位:
MgZnO/MgO量子阱的生长、物性调控及其深紫外光发射器件研究
- 批准号:51172041
- 项目类别:面上项目
- 资助金额:60.0万元
- 批准年份:2011
- 负责人:徐海阳
- 依托单位:
基于p-GaN/i-MgO/n-MgxZn1-xO异质结构波长可调的紫外光发射器件研究
- 批准号:60907016
- 项目类别:青年科学基金项目
- 资助金额:25.0万元
- 批准年份:2009
- 负责人:徐海阳
- 依托单位:
国内基金
海外基金
