离子注入薄膜剥离在半导体r-TiO2和光学晶体KTP上的应用研究

离子注入薄膜剥离方法在高性能的亚微米单晶薄膜制备上具有独特的优势，所制得的单晶薄膜结构对微纳光电器件的制作有巨大的应用潜力。然而，相较于在半导体材料上的广泛应用，光学晶体复杂的晶格结构和光电性质，导致离子注入方法在光学晶体上的应用存在很多困难和挑战。本项目以宽禁带半导体材料r-TiO2和光学氧化物晶体KTP两种不同性质的材料作为研究对象，通过对比分析两种材料的离子辐射效应和退火效应，明确材料性质对晶格损伤形成和缺陷传输的影响，揭示离子注入方法在不同材料中实现薄膜剥离的物理机制，尝试将这种薄膜制备方法推广到更多有优越特性却难以生长薄膜的光学材料中。项目拟利用离子注入与铜锡键合相结合的技术手段制备r-TiO2单晶薄膜异质结构，并通过高Q值微环谐振器的制作实现其光电应用；通过对离子注入薄膜剥离物理机制的研究，完成KTP单晶薄膜的制备。该项研究对光电集成和量子信息等领域的发展具有重要的科学意义。

Ion-implantation method has unique advantage of obtaining high-performance、sub-micron crystalline thin films, which show great potential in fabrication of micro-nano optoelectronic devices. However, compared with the widespread applications in semiconductor materials, ion-implantation method has to face many difficulties and challenges in obtaining optical single crystalline wafers, because of complex lattice structures and optoelectronic properties of optical crystals. This project explains the influence of materials’ properties on lattice damage formation and defects transmission, and uncovers the physical mechanisms of thin film exfoliation between different ion-implanted materials, through analyzing the irradiation effects and annealing effects of wide-gap semiconductor material rutile titanium dioxide (r-TiO2) and nonlinear optical crystal potassium titanium oxide phosphate, in the aim of applying this thin film exfoliation method to more optical crystals with excellent properties but unable to obtain crystalline thin films. r-TiO2 crystalline thin film heterostructure is fabricated by ion-implantation method in combination with Cu-Sn bonding technique, and its optoelectronic applications are realized by manufacturing microring resonator with high-Q factor; KTP single crystalline wafer is formed based on the study of the physical mechanism of ion-implantation thin film exfoliation. This research project has important scientific significance in the development of optoelectronic integration and quantum information fields.