等离子体增强CVD法低温制备锗基单晶石墨烯连续膜

在非金属基底上低温制备大面积单晶石墨烯连续膜的技术是实现石墨烯在集成电路中大规模应用的前提。针对上述要求，本项目拟采用等离子体增强化学气相沉积法，实现半导体锗基底上大面积单晶石墨烯连续膜的制备，且制备温度（＜600 ℃）与半导体制造工艺相兼容；结合测试表征技术与理论计算（第一性原理和分子动力学），揭示等离子体增强化学气相沉积法低温制备锗基单晶石墨烯连续膜的生长机理；利用锗基底与顶层所生长的单晶石墨烯形成的二维异质结，开展锗-石墨烯肖特基器件（如光电探测器、太阳能电池等）的前期探索应用。本项目的研究为非金属基底上单晶石墨烯连续膜的低温生长及石墨烯电子学器件的发展奠定了重要基础。

To realize the great potentials of graphene that widely applied in the current integrated circuit field, low-temperature growth of graphene on non-metal substrate with a uniform and single-crystal continuous films is urgently demanded. Motivated by these considerations, we propose a convenient and controllable approach for large-scale growth of single-crystal and continuous graphene films directly on germanium semiconductor substrate by plasma enhanced chemical vapor deposition. Notably, the deposition temperature of the proposed graphene growth method is reduced smaller than 600 ℃, which renders the process to be scalable and compatible with the mainstream silicon-based microelectronics technology. Moreover, by combining the theoretical calculations (i.e., first-principles calculation and molecular dynamics) and experimental characterizations, the corresponding mechanisms of graphene grown process by plasma enhanced chemical vapor deposition is deeply investigated, including nucleation, growing and joint. In order to demonstrate the potential optoelectronic applications of as-grown graphene-germanium heterojunction without any transfer process, Schottky devices (such as photodetectors, solar cells, etc.) will be fabricated, and the opto-electronic properties of germanium-graphene Schottky structure will be investigated. Our works in this project may pave the way for low-temperature growing single-crystal graphene on non-metal substrate and their applications in graphene-based nanoelectronic/optoelectronic devices.