GaN宽禁带半导体材料是节能产业、尖端军事和空间用电子器件的核心材料，基于其对国民经济和国防建设的重要意义，GaN晶体材料的研究和应用成为了目前全球半导体研究的前沿和热点。但异质外延生长的GaN晶体具有较高的位错密度和较大应力，对光电器件的性能影响很大，成为制约其应用的主要瓶颈。因此选择能有效降低外延GaN晶体应力和位错密度的籽晶是生长高质量GaN晶体的关键。本项目拟采用新型减薄-金属键合衬底、晶格失配和热失配更小的SiC籽晶、高温多孔衬底进行GaN单晶生长，系统研究不同衬底上GaN晶体的成核机制、界面生长过程、应力减小和位错阻断机制以及衬底分离机制等问题，优化生长工艺，以期生长出高质量、2英寸自支撑GaN晶体。本项目的实施为攻克GaN晶体生长关键技术，探索具有低成本、高可靠性，易产业化的GaN晶体生长技术具有重要应用价值。

GaN wide band gap semiconductor material is the core of saving energy industry, sophisticated military and space electronic devices. Based on its importance to national economy and national defense construction, the study on GaN crystal materials has become the forefront and the hot spot of the global research. However, there are a high dislocation density and a large stress in hetero-epitaxial GaN, which has a great influence on the performance of devices and become the bottleneck of applications. Therefore, choosing the appropriate seed which can be used to effectively reduce stress and dislocation density is the key. The GaN crystals grown on novel bonding-thinned substrate, SiC substrate and high temperature annealing porous substrate are main research object. We will systematically studied the nucleation mechanisms, interface growth process, stress reduction, dislocation blocking and self-separation mechanisms of GaN crystal growth. In order to obtain the high quality, 2 inch and self-separation GaN crystals, we will further optimize the growth process. The implementation of this project is helpful to overcome the GaN crystal growth technology. It also has important application value for exploring the low cost, high reliability and easy to industrialization GaN crystal growth technology.