双极晶体管是空间辐射环境中广泛应用的关键电子器件，对位移辐射损伤较为敏感。位移辐射损伤会在晶体管内部产生深能级缺陷，导致性能退化。目前国内外进行的深能级缺陷研究主要针对硅材料，而针对器件内的缺陷行为研究较少。与硅材料相比，双极晶体管具有不同掺杂浓度的特殊器件结构。在不同区域内深能级缺陷对晶体管性能退化的影响机制尚待研究。并且，深能级缺陷的状态可随着电场强度及温度等因素动态演化，这也增加了深能级缺陷诱导双极晶体管性能退化机理的研究难度。迄今，国际上对于深能级缺陷诱导性能退化的作用机制研究尚处于起步阶段，难以建立有效的物理模型。为此，本项目将通过不同类型重离子辐照试验，研究双极晶体管位移辐射电性能退化及深能级缺陷演化规律研究，揭示深能级缺陷诱导电性能退化的微观机制，建立深能级缺陷诱导性能退化物理模型。本项目的研究成果对双极晶体管抗辐照能力优化和在轨性能退化预测都具有重要的工程意义和学术价值。

Bipolar junction transistors (BJTs) have important applications in which they may be exposed to radiation environments, and are sensitive to displacement radiation damage. Displacement damage can induce the deep level defects in BJT, and make the degradation of the electrical performance. Numerous studies have studied the deep level defects in silicon material, while little study is performed about the defects in silicon device. There are oxide layer, PN junction and depleted region in BJT. The evolution mechanism of the deep level defects are different in these special regions. In addition, the dynamic evolution of the deep level defects with the electrical field and temperature increased the difficulty of the interactions between defects and electrical performance in BJTs. Nowadays, there is no deep level defects behavior and performance parameter correlation model. Therefore, this project will research the basic characteristics and evolution of the deep level defects, reveal the influence of deep level defects on electrical parameters, and establish a radiation-induced deep level defects behavior and electrical parameters correlation model.