互补阻性开关阵列的非线性动力学理论及电路设计方法研究

阻变存储器（RRAM）开关机制、单元结构、读写操作模式、耐受性、保持特性方面有诸多关键的理论和技术问题期待解决。本项目研究互补阻性开关阵列动力学理论, 在阻性开关基本物理机制和电路设计之间构建桥梁作用；研究互补阻性开关阵列设计方法学与电路设计方法，为存储密度、操作电压性能、耐受性等性能优化提供技术保证。本项目研究工作将逐步通过研究阻变存储器器件与交叉阵列的模型与动力学理论、电路设计方法，研究新存储器结构和电路技术，为新型阻变非易失存储器设计方法学提供理论与技术支撑。

Several theoretical and technical problems, such as switching mechanism, cell structure, the mode of read and write operation, should be investigated indepth for Resistive Random Access Memory(RRAM) so far. The proposed project studies the dynamics of complementary resistance switching array, and will bridge the gap between the intrinsic mechanism of resistive switching and circuit design technology. The design methodology of complementary resistance switching array and the circuit design method will also be discussed in detail, and will provide the optimization process for storage density, the performance of operating voltage and endurance for resistive RAM. The proposed project will provide the new memory architechture and circuit design techonology for the non-volatile memory, by the investigation of models, nonlinear dynamics, circuits design methodology of the crossbar architechture for Resistive RAM.