基于烧结平面互联的新型高压碳化硅功率模块封装技术与失效机制研究
结题报告
批准号:
U1966212
项目类别:
联合基金项目
资助金额:
285.0 万元
负责人:
王来利
依托单位:
学科分类:
电力电子学
结题年份:
2023
批准年份:
2019
项目状态:
已结题
项目参与者:
王来利
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中文摘要
高压碳化硅功率器件具有耐压等级高,开关速度快,导通压降低等优异特性,在电网中有着广阔的应用前景。但是,目前的高压器件封装技术主要都是在硅功率器件的基础上发展来的,并不适用于发挥高压碳化硅器件的优异特性。本项目基于目前典型高压功率模块封装结构所存在的问题与高压碳化硅器件的基本特性,提出一种基于纳米银烧结平面互联的新型高压碳化硅功率模块。并基于该模块提出三维集成半桥结构,外接解耦电容组等关键技术,在安装及散热方式与现有电网系统高压功率模块兼容的条件下,实现了低回路寄生参数,高导热性与高可靠性。在本项目中,建立了纳米银膜宏观测试特性与微观检测形貌的对应关系,结合工艺参数从微观角度提高导热率与可靠性等宏观特性。同时,采用宏观特性测试、微观形貌检测与基于计算机仿真的多物理场模型相结合的方式研究新型功率模块失效机制问题。
英文摘要
High voltage silicon carbide (SiC) power devices have many excellent characteristics, such as high blocking voltage, fast switching speed and reduced conduction voltage. They have broad application prospects in power grid. However, the packaging technology of high-voltage devices is mainly developed on the basis of silicon power devices, which is not suitable for exerting the excellent characteristics of high-voltage SiC devices. In this project, a new high-voltage SiC power module based on nano-silver sintered plane interconnection is proposed, which is based on the problems existing in the packaging structure of typical high-voltage power modules and the basic characteristics of high-voltage SiC devices. Based on this module, the main technologies such as three-dimensional integrated half-bridge structure and decoupled capacitor banks are proposed. Under the condition that the installation and heat dissipation mode are compatible with the existing high-voltage power module of power grid system, low parasitic parameters, high thermal conductivity and high reliability are realized. In this project, the relationship between the macro-test characteristics and the micro-test morphology of nano-silver film is established, and the macro-characteristics such as thermal conductivity and reliability are improved from the micro-point of view combined with the process parameters. At the same time, the failure mechanism of the new power module is studied by combining macro-characteristic test, micro-morphology test and multi-physical field model based on computer simulation.
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
DOI:10.1109/tdei.2023.3316631
发表时间:2023-12
期刊:IEEE Transactions on Dielectrics and Electrical Insulation
影响因子:3.1
作者:Kai-Bing Sun;Y. Mei;Zhibin Shuai;Longnv Li
通讯作者:Kai-Bing Sun;Y. Mei;Zhibin Shuai;Longnv Li
DOI:10.1109/tpel.2020.2993033
发表时间:2020-12
期刊:IEEE Transactions on Power Electronics
影响因子:6.7
作者:Chengzi Yang;Y. Pei;Laili Wang;Longyang Yu;Cheng Zhao;Mengyu Zhu;Xingshuo Liu
通讯作者:Chengzi Yang;Y. Pei;Laili Wang;Longyang Yu;Cheng Zhao;Mengyu Zhu;Xingshuo Liu
DOI:10.1109/tdmr.2023.3272928
发表时间:2023-06
期刊:IEEE Transactions on Device and Materials Reliability
影响因子:2
作者:Panpan Lu;Longnv Li;G. Lu;Zhibin Shuai;Xinhua Guo;Y. Mei
通讯作者:Panpan Lu;Longnv Li;G. Lu;Zhibin Shuai;Xinhua Guo;Y. Mei
DOI:10.1049/iet-pel.2019.1345
发表时间:2020
期刊:IET POWER ELECTRONICS
影响因子:--
作者:Mei Yunhui;Hao Baisen;Chen Yue;Wang Meiyu;Li Xin;Lu Guo-Quan
通讯作者:Lu Guo-Quan
DOI:--
发表时间:2022
期刊:IEEE Transactions on Industrial Electronics
影响因子:--
作者:Cheng Zhao;Laili Wang;Xu Yang;Fan Zhang;Yongmei Gan
通讯作者:Yongmei Gan
新型高压碳化硅功率模块封装设计与优化
  • 批准号:
    52211530090
  • 项目类别:
    国际(地区)合作与交流项目
  • 资助金额:
    10万元
  • 批准年份:
    2022
  • 负责人:
    王来利
  • 依托单位:
新型高压碳化硅功率模块封装设计与优化
  • 批准号:
    --
  • 项目类别:
    国际(地区)合作与交流项目
  • 资助金额:
    --
  • 批准年份:
    2021
  • 负责人:
    王来利
  • 依托单位:
基于功能集成的磁封装基础理论和关键技术研究
  • 批准号:
    51607141
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    21.0万元
  • 批准年份:
    2016
  • 负责人:
    王来利
  • 依托单位:
国内基金
海外基金