申请人在承担青年基金过程中，系统深入地开展低维In(Ga)As DWELL激光器材料、中红外In(Al)GaAsSb DWELL激光器材料的MBE外延生长技术研究，探索了1.5-2.2µm近、中红外波段In(Ga)As(Sb)低维量子尺寸激光器材料制备技术。通过优化材料质量，深入开展工艺研究，制备了位于该波段的半导体激光器件，为进一步开展近、中红外波段半导体激光器材料和器件研究提供了基础材料和技术支持。本项目申请将继续开展包括 1.5-2.2μm波段新材料结构的制备和器件制备工作，为进一步开展高性能近、中红外含Sb DWELL结构工作打下良好的工作基础。

We performed a systematic study on growth and fabrication of multi-layer quantum dots-in-well laser structure (DWELL)Low-dimensional quantum dots located in the 1.5-2.2µm near- and mid–infrared wavelength range has become one of the international frontier areas. These devices are especially attractive for the development of sensitive optical sensor instrumentation. They also are of enormous interest for the practical realization of optoelectronic devices operating in the 1.5-2 μm wavelength range. The present research work focuses on 1.5-2 µm quantum dots (QDs) and multiple quantum wells (MQWs) materials and devices. The active layers were in the first case low-dimensional burried In(Ga)As QDs, and in the second case MBE-grown mid-infrared antimonide MQWs In(Al)GaAsSb emitting in the 1.5-2.2µm near-infrared band. By optimizing the quality of materials and the growth technology, we prepared the high quality antimonide laser structures and devices, which is conducive for further research for near- and mid-infrared semiconductor lasers development and a wide range of applications.